.
Fairchild Semiconductor
6N80C - 800V N-Channel MOSFET
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω December 2013 Description This N-Chan.
maspower
5HB06N8 - Power MOSFET
5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P-CH -60V QG 9.0nC RDS(on) 25m.
nELL
6N80 - N-Channel Power MOSFET
SEMICONDUCTOR 6N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (6A, 800Volts) The Nell 6N80 is a three-terminal .
Infineon
06N80C3 - Power Transistor
SPP06N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qua.
Huajing Microelectronics
CS6N80A0H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS6N80 A0H ○R General Description： CS6N80 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
UTC
6N80 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6N80 6.0A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using UTC’s adv.
Fairchild Semiconductor
FQPF6N80T - N-Channel MOSFET
FQPF6N80T — N-Channel QFET® MOSFET FQPF6N80T N-Channel QFET® MOSFET 800 V, 3.3 A, 1.95 Ω Description This N-Channel enhancement mode power MOSFET is .
Inchange Semiconductor
6N80 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 6N80 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static .
GME
BL6N80F - N-Channel Power Mosfet
6A,800V N-Channel Power Mosfet FEATURES 6A, 800V, RDS(on) = 2.5Ω @VGS = 10 V Improved dv/dt Capability Fast Switching 100% Avalanche Tested .
Fairchild Semiconductor
FQPF6N80C - 800V N-Channel MOSFET
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET December 2013 FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω Description Features Th.
DELTA
0805CS-6N8E - WIRE-WOUND CHIP INDUCTOR
1. Part Description 1.1 Part Numbering (Example) ( Ex. ) 0805 C S - 120 E J T S SIZE. 0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.
Fairchild Semiconductor
FQP6N80 - 800V N-Channel MOSFET
FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.
Coilcraft
0402ME-6N8XGLW - Chip Inductors
Document 434 -1 Chip Inductors – 0402ME Series (1005) The 0402ME chip inductors offer outstanding SRF and excellent Q values at higher frequencies. T.
Coilcraft
0402ME-6N8XGLU - Chip Inductors
Document 434 -1 Chip Inductors – 0402ME Series (1005) The 0402ME chip inductors offer outstanding SRF and excellent Q values at higher frequencies. T.
CR Micro
CS6N80A4R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS6N80 A4R General Description： CS6N80 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali.
Excelliance MOS
EMD06N80F - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 800V D RDSON (MAX.) 1.65Ω ID 6A G UIS, 10.
Fairchild Semiconductor
FQA6N80 - 800V N-Channel MOSFET
FQA6N80 September 2000 QFET FQA6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.
IXYS
IXTM6N80A - Power MOSFET
Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbo.
IXYS
IXTH6N80A - Power MOSFET
Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbo.
