70N10 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N10 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Vol

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BSC070N10NS5 MOSFET OptiMOSTM5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Supe

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FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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www.DataSheet4U.com Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P

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FQA70N10 August 2000 QFET FQA70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N

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IAUA170N10S5N031 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK Feature

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SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Pa

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFN70N100X D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt T

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FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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FQP70N10 August 2000 QFET FQP70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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MOSFET - Power, Single N-Channel 100 V, 65 mW, 13 A NVTFS070N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Mini

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SW70N10V N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 12.4mΩ)@VGS=4.5V Low RDS(ON) (Typ 11.7mΩ)

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UNISONIC TECHNOLOGIES CO., LTD USG170N10 170A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC USG170N10 is a N-channel Power MOSFET, it uses UTC’s

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JMTK170N10A Description JMT N-channel Enhancement Mode Power MOSFET Features  100V,59A RDS(ON)<20mΩ @ VGS =10V  Advanced Trench Technology  Exce

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