INCHANGE Semiconductor isc N-Channel MOSFET Transi.
Fairchild Semiconductor
FQB70N10 - 100V N-Channel MOSFET
FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe.
Infineon
070N10N5 - MOSFET
BSC070N10NS5 MOSFET OptiMOSTM5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Supe.
Fairchild Semiconductor
SSH70N10A - Advanced Power MOSFET
Advanced Power MOSFET SSH70N10A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exten.
Fairchild Semiconductor
FQI70N10 - 100V N-Channel MOSFET
FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe.
Infineon Technologies
SPB70N10L - SIPMOS Power-Transistor
Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Chann.
STMicroelectronics
STB70N10F4 - N-CHANNEL MOSFET
STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK Feature.
ON Semiconductor
NVTFS070N10MCL - N-Channel MOSFET
MOSFET - Power, Single N-Channel 100 V, 65 mW, 13 A NVTFS070N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Mini.
Inchange Semiconductor
IXFH170N10P - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IXFH170N10P FEATURES ·Drain Current : ID= 170A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source .
NCE Power Semiconductor
NCE70N100I - N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE70N100I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench tech.
Matsuki
ME70N10T-G - N- Channel 100-V (D-S) MOSFET
N- Channel 100-V (D-S) MOSFET ME70N10T / ME70N10T-G GENERAL DESCRIPTION The ME70N10T is the N-Channel logic enhancement mode power field effect tran.
Matsuki
ME70N10T - N- Channel 100-V (D-S) MOSFET
N- Channel 100-V (D-S) MOSFET ME70N10T / ME70N10T-G GENERAL DESCRIPTION The ME70N10T is the N-Channel logic enhancement mode power field effect tran.
Infineon
BSC070N10NS5 - MOSFET
BSC070N10NS5 MOSFET OptiMOSTM5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Supe.
Fairchild Semiconductor
FQAF70N10 - 100V N-Channel MOSFET
FQAF70N10 August 2000 QFET FQAF70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p.
Fairchild Semiconductor
FQP70N10 - 100V N-Channel MOSFET
FQP70N10 August 2000 QFET FQP70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.
Fairchild Semiconductor
FQPF70N10 - 100V N-Channel MOSFET
FQPF70N10 — N-Channel QFET® MOSFET FQPF70N10 N-Channel QFET® MOSFET 100 V, 35 A, 23 mΩ Description This N-Channel enhancement mode power MOSFET is pr.
Inchange Semiconductor
70N10 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N10 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Vol.
Samsung Electronics
SSF70N10A - Advanced Power MOSFET
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SSDI
SFF70N10M - N-Channel Power MOSFET
www.DataSheet4U.com SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 SFF70N10M SFF.
Infineon Technologies
70N10L - SPI70N10L
www.DataSheet4U.com Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P.
Infineon Technologies
SPI70N10L - SIPMOS Power-Transistor
www.DataSheet4U.com Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P.