70N10 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N10 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Vol

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www.DataSheet4U.com Preliminary data SPI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N10KUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N10KUF is N-channel MOS Field Effect Transist

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NDPL070N10B Power MOSFET 100V, 10.8mΩ, 70A, N-Channel This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is sp

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isc N-Channel MOSFET Transistor IXTK170N10P ·FEATURES ·Drain Current ID=170A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source O

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X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFN70N100X D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt T

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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BSC070N10NS5 MOSFET OptiMOSTM5 Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Supe

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FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Pa

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SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Pa

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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CEP70N10/CEB70N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 70A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense ce

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MOSFET - Power, Single N-Channel 100 V, 65 mW, 13 A NVTFS070N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Mini

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IAUA170N10S5N031 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK Feature

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PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH170N10P IXFK170N10P VDSS = ID25 = RDS(on)

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA E

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