70N10 Datasheet | Specifications & PDF Download

FQB70N10 / FQI70N10 August 2000 QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFN70N100X D G S S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt T

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t

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isc N-Channel MOSFET Transistor IXTK170N10P ·FEATURES ·Drain Current ID=170A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source O

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA E

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SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Pa

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PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH170N10P IXFK170N10P VDSS = ID25 = RDS(on)

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SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Pa

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IAUA170N10S5N031 Automotive MOSFET OptiMOS™-5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N

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JMTK170N10A Description JMT N-channel Enhancement Mode Power MOSFET Features  100V,59A RDS(ON)<20mΩ @ VGS =10V  Advanced Trench Technology  Exce

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CEP70N10/CEB70N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 70A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense ce

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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N-Channel 100 V (D-S) Power MOSFET DTP70N10 www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0085 at VGS = 10 V ID (A) 100a TO-220AB FE

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X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFB70N100X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N10 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Vol

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA E

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SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Pa

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N

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PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH170N10P IXFK170N10P VDSS = ID25 = RDS(on)

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