7N60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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MDF7N60B N-channel MOSFET 600V MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced Ma

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 7N60B ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Volt

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HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 File Number 4412.2 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60B3S, HGT1S7N60B3S

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode I

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Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D,

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Silicon N-Channel Power MOSFET CS7N60 A4R ○R General Description： CS7N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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PFU7N60EG / PFD7N60EG Green Package FEATURES  Originative New Design PFU7N60EG / PFD7N60EG 600V N-Channel MOSFET  100% EAS Test  Rugged Gate O

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www.DataSheet4U.com HiPerFASTTM IGBT LightspeedTM Series IXGA 7N60C IXGP 7N60C VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.7 V = 45 ns Symbol VCES

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600V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This ad

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HGTP7N60C3D, HGT1S7N60C3D, SEMICONDUCTOR HGT1S7N60C3DS January 1997 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Feat

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PFP7N60E / PFF7N60E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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SEMICONDUCTOR 7N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (7A, 600Volts) DESCRIPTION The Nell 7N60 is a three-terminal si

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SMPS MOSFET PD - 95479A IRFP27N60KPbF Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 70mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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