7N60-Q Datasheet | Specifications & PDF Download

N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PL

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 7N60B ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Volt

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PL

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta

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MDF7N60B N-channel MOSFET 600V MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced Ma

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D,

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SEMICONDUCTOR 7N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (7A, 600Volts) DESCRIPTION The Nell 7N60 is a three-terminal si

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Silicon N-Channel Power MOSFET CS7N60 A4R ○R General Description： CS7N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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MDF7N60 N-channel MOSFET 600V MDF7N60 N-Channel MOSFET 600V, 7A, 1.15Ω General Description The MDF7N60 uses advanced Magnachip’s MOSFET Technology,

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-chann

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HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 File Number 4412.2 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60B3S, HGT1S7N60B3S

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Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-chann

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UNISONIC TECHNOLOGIES CO., LTD 7N60 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to hav

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