80N06 Datasheet | Specifications & PDF Download

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIP

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem

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PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIP

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

(28 views)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 80N06 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fa

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PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIP

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OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o

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UNISONIC TECHNOLOGIES CO., LTD 80N06 Preliminary 80A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N06 is an N-channel MOSFET using UTC adva

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HRP80N06K HRP80N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Charac

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CYStech Electronics Corp. 60V N-Channel Enhancement Mode MOSFET MTB180N06KSN3 Spec. No. : C052N3 Issued Date : 2016.12.09 Revised Date : 2016.12.12 P

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OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) kJ`Ü~ååÉä=båÜ~åÅÉãÉåí=jçÇÉ ^î~ä~åÅÜÉ=o~íÉÇI=eáÖÜ=ÇîLÇíI=içï=íêê mêÉäáãáå~êó=Ç~í

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IPD80N06S3-09 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 8.4 80 V mΩ A Features • N-channel - Normal Level - Enhancement m

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