80N06 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 80N06 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fa

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UNISONIC TECHNOLOGIES CO., LTD 80N06 Preliminary 80A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N06 is an N-channel MOSFET using UTC adva

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isc N-Channel MOSFET Transistor SSP80N06A ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed

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CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extre

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UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary 60V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mod

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CYStech Electronics Corp. 60V N-Channel Enhancement Mode MOSFET MTB180N06KSN3 Spec. No. : C052N3 Issued Date : 2016.12.09 Revised Date : 2016.12.12 P

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IPD80N06S3-09 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 8.4 80 V mΩ A Features • N-channel - Normal Level - Enhancement m

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OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175

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IPB80N06S2L-H5-VB IPB80N06S2L-H5-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60

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Silicon N-Channel Power MOSFET ○R CS180N06 A8 General Description： CS180N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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Type 381LX / 383LX 105 °C High Ripple, Snap-In Aluminum High Ripple, Long Life, 2, 4 and 5 pin styles available Specifications Temperature Range Rate

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem

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HRP80N06K HRP80N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Charac

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Automotive AEC Q101 qualified • Avalanche rated • dv/dt rated P- TO

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www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature • N-

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Automotive AEC Q101 qualified • Avalanche rated • dv/dt rated P- TO

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IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 u

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IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 u

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