8N60-E Datasheet | Specifications & PDF Download

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8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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FHF8N60NMOS 。AC-DC ，DC-DC，HPMW。 ★ ★ ★ 8A,600V,RDS(on)(）0.8Ω 、 FHF8N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg 600 8 ±30 52

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INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25

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UNISONIC TECHNOLOGIES CO., LTD 18N60 18A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N60 uses UTC’s advanced proprietary, plan

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isc N-Channel MOSFET Transistor AOT8N60 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor IXFP18N60X ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characterized avalanche volt

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FQP8N60C — N-Channel QFET® MOSFET FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω April 2014 Description These N-Channel enhancement mode power

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PD - 94630 SMPS MOSFET IRFPS38N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Serv

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ S

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SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which

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isc N-Channel MOSFET Transistor AOTF8N60 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Re

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8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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AOT8N60 www.datasheet4u.com / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description The AOT8N60 &

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STFU18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ult

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FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% A

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z

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UNISONIC TECHNOLOGIES CO., LTD 8N60-MH Preliminary 8.0A, 600V N-CHANNEL POWER MOSFET 1 Power MOSFET 1  DESCRIPTION The UTC 8N60-MH is a high vol

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