8N60-E Datasheet | Specifications & PDF Download

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which

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NDF08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • T

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FHF8N60NMOS 。AC-DC ，DC-DC，HPMW。 ★ ★ ★ 8A,600V,RDS(on)(）0.8Ω 、 FHF8N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg 600 8 ±30 52

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FQP8N60/FQPF8N60 600V,8A N-Channel MOSFET General Description Product Summary The FQP8N60 & FQPF8N60 have been fabricated using an advanced high vo

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STW48N60M2-4 Datasheet N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(

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STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247 Datashe

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Advance Technical Information GenX3TM 600V IGBT IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 VCES = 600V IC110 = 28A V CE(sat)  1.4V Ultra Low Vsat

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SEMICONDUCTOR 8N60 Series RRooHHSS Nell High Power Products DESCRIPTION N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal s

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 18N60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy

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AOT8N60 www.datasheet4u.com / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description The AOT8N60 &

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 18N60P IXTV 18N60P IXTV 18N60PS V = 600 V DSS ID25 = 18 A ≤ RDS(on) 420 mΩ S

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Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode High Speed PT IGBT for 40 - 100kHz Switching IXG

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GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 *Obsolete Part Number VCES = IC110 =

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www.DataSheet.co.kr R N N-CHANNEL MOSFET JCS8N60 MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.5 A 600 V 1.2 Ω 54

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FDPF8N60ZUT — N-Channel UniFETTM II Ultra FRFETTM MOSFET FDPF8N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 6.5 A, 1.35 Ω November 2013

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PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, R DS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switc

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SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which

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TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 10

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MDF8N60 N-channel MOSFET 600V MDF8N60 N-Channel MOSFET 600V, 8A, 1.0Ω General Description The MDF8N60 uses advanced Magnachip’s MOSFET Technology, w

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