BASiC Semiconductor Datasheet | Pinout, Features, Price Comparison & PDF

Product Summary VRRM 1200
V IF (TC=160°C) QC 20 A 120 nC Features  Extremely low reverse current  No reverse recovery current  Temperature inde

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~National ~ Semiconductor MARCH 1978 INS829811NS8298E 8080A LLL BASIC Interpreter General Description Features The INS8298/1NS8298E is a 65k MAXI

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~National ~ Semiconductor MARCH 1978 INS829811NS8298E 8080A LLL BASIC Interpreter General Description Features The INS8298/1NS8298E is a 65k MAXI

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B2D06065E1 SiC Schottky Diode Product Summary VRRM 650
V Package: TO-252-3 IF (TC=160°C) QC 6A 17 nC Features  Low leakage current (IR)  Zero

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Product Summary VRRM 1200
V IF (TC=150°C) QC 10 A 51 nC Features  Low leakage current (IR)  Zero reverse recovery current  Temperature independ

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Product Summary VRRM 650
V IF (TC=155°C) QC 40 A 114 nC Features  Low leakage current (IR)  Zero reverse recovery current  Temperature independ

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B2D08065K1 SiC Schottky Diode Product Summary VRRM 650
V IF (TC=160°C) 8A QC 24 nC Features  Low leakage current (IR)  Zero reverse recovery

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B2D20065F1 SiC Schottky Diode Product Summary VRRM 650
V IF (TC=150°C) QC 20 A 59 nC Features  Low leakage current (IR)  Zero reverse recovery

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Product Summary VRRM 650
V IF (TC=155°C) QC 30 A 83 nC Features  Low leakage current (IR)  Zero reverse recovery current  Temperature independe

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www.DataSheet4U.com HT82A832R Basic USB Phone OTP MCU Features · Operating voltage: fSYS = 6M/12MHz: 4.0V~5.5V · 24 bidirectional I/O lines (max.) ·

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www.DataSheet4U.com HT82A821R Basic USB Speaker OTP MCU Features · USB 2.0 full speed compatible · USB spec v1.1 full speed operation and USB audio ·

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B2D20065K1 SiC Schottky Diode Product Summary VRRM 650
V IF (TC=155°C) 20 A QC 58 nC Features  Low leakage current (IR)  Zero reverse recover

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Product Summary VRRM 650
V IF (TC=155°C) QC 8A 24 nC Features  Extremely low reverse current  No reverse recovery current  Temperature indep

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Product Summary VRRM 1200
V IF (TC=155°C) QC 10 A 51 nC Features  Extremely low reverse current  No reverse recovery current  Temperature indep

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B2D06065K1 SiC Schottky Diode Product Summary VRRM 650
V IF (TC=165°C) 6A QC 18 nC Features  Low leakage current (IR)  Zero reverse recovery

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Product Summary VRRM 1200
V IF (TC=155°C) QC 40 A 225 nC Features  Low leakage current (IR)  Zero reverse recovery current  Temperature indepen

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Product Summary VRRM 650
V IF (TC=155°C) QC 15 A 46 nC Features  Extremely low reverse current  No reverse recovery current  Temperature indepe

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B2D30120HC1 SiC Schottky Diode Product Summary VRRM 1200
V Package: TO-247-3 IF (TC=155°C) QC 30 A** 178 nC** Features  Extremely low reverse c

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