.
National Semiconductor
TP3410 - TP3410 ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver
TP3410 ISDN Basic Access Echo-Cancelling U Transceiver September 1994 TP3410 ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver General Descriptio.
Motorola
AN1570 - Basic Semiconductor Thermal Measurement
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
Holtek Semiconductor
HT82A832R - Basic USB Phone OTP MCU
www.DataSheet4U.com HT82A832R Basic USB Phone OTP MCU Features · Operating voltage: fSYS = 6M/12MHz: 4.0V~5.5V · 24 bidirectional I/O lines (max.) · .
Holtek Semiconductor
HT82A821R - Basic USB Speaker OTP MCU
www.DataSheet4U.com HT82A821R Basic USB Speaker OTP MCU Features · USB 2.0 full speed compatible · USB spec v1.1 full speed operation and USB audio ·.
National Semiconductor
INS8298E - 8080A LLL BASIC Interpreter
~National ~ Semiconductor MARCH 1978 INS829811NS8298E 8080A LLL BASIC Interpreter General Description Features The INS8298/1NS8298E is a 65k MAXI.
National Semiconductor
INS8298 - 8080A LLL BASIC Interpreter
~National ~ Semiconductor MARCH 1978 INS829811NS8298E 8080A LLL BASIC Interpreter General Description Features The INS8298/1NS8298E is a 65k MAXI.
BASiC Semiconductor
B2D06065E1 - SiC Schottky Diode
B2D06065E1 SiC Schottky Diode Product Summary VRRM 650V Package: TO-252-3 IF (TC=160°C) QC 6A 17 nC Features Low leakage current (IR) Zero .
BASiC Semiconductor
B2D20065K1 - SiC Schottky Diode
B2D20065K1 SiC Schottky Diode Product Summary VRRM 650V IF (TC=155°C) 20 A QC 58 nC Features Low leakage current (IR) Zero reverse recover.
BASiC Semiconductor
B2D10120H1 - SiC Schottky Diode
Product Summary VRRM 1200V IF (TC=150°C) QC 10 A 51 nC Features Low leakage current (IR) Zero reverse recovery current Temperature independ.
BASiC Semiconductor
B2D40065H1 - SiC Schottky Diode
Product Summary VRRM 650V IF (TC=155°C) QC 40 A 114 nC Features Low leakage current (IR) Zero reverse recovery current Temperature independ.
BASiC Semiconductor
B1D08065E - SiC Schottky Diode
Product Summary VRRM 650V IF (TC=155°C) QC 8A 24 nC Features Extremely low reverse current No reverse recovery current Temperature indep.
BASiC Semiconductor
B2D30120HC1 - SiC Schottky Diode
B2D30120HC1 SiC Schottky Diode Product Summary VRRM 1200V Package: TO-247-3 IF (TC=155°C) QC 30 A** 178 nC** Features Extremely low reverse c.
BASiC Semiconductor
B2D10120K1 - SiC Schottky Diode
Product Summary VRRM 1200V IF (TC=155°C) QC 10 A 51 nC Features Extremely low reverse current No reverse recovery current Temperature indep.
BASiC Semiconductor
B2D06065K1 - SiC Schottky Diode
B2D06065K1 SiC Schottky Diode Product Summary VRRM 650V IF (TC=165°C) 6A QC 18 nC Features Low leakage current (IR) Zero reverse recovery .
BASiC Semiconductor
B2D40120H1 - SiC Schottky Diode
Product Summary VRRM 1200V IF (TC=155°C) QC 40 A 225 nC Features Low leakage current (IR) Zero reverse recovery current Temperature indepen.
BASiC Semiconductor
B2D15065K - SiC Schottky Diode
Product Summary VRRM 650V IF (TC=155°C) QC 15 A 46 nC Features Extremely low reverse current No reverse recovery current Temperature indepe.
BASiC Semiconductor
B2D40120HC1 - SiC Schottky Diode
B2D40120HC1 SiC Schottky Diode Product Summary VRRM 1200V IF (TC=150°C) QC 40 A** 240 nC** Features Extremely low reverse current No reverse.
BASiC Semiconductor
B2D10065Q - SiC Schottky Diode
Product Summary VRRM 650V IF (TC=155°C) 10 A QC 29 nC Features Extremely low reverse current No reverse recovery current Temperature ind.
BASiC Semiconductor
B2D16065HC1 - SiC Schottky Diode
Product Summary VRRM 650V IF (TC=160°C) 16 A** QC 46 nC** * Per Leg, ** Per Device Features Low leakage current (IR) Zero reverse recovery.
BASiC Semiconductor
B2D08065K1 - SiC Schottky Diode
B2D08065K1 SiC Schottky Diode Product Summary VRRM 650V IF (TC=160°C) 8A QC 24 nC Features Low leakage current (IR) Zero reverse recovery .
