logo

BCP Matched Datasheet



Part Number Description Manufacture
BCP55
NPN medium power transistors
and benefits
 High current
 Three current gain selections
 High power dissipation capability
 Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
 Leadless very small SMD plastic package with medium power capabili
Manufacture
NXP
H9TP32A4GDBCPR
4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32)
[ CI-MCP ]
● Operation Temperature - (-25)oC ~ 85oC
● Package - 162-ball FBGA - 11.5x13.0mm2, 1.0t, 0.5mm pitch - Lead & Halogen Free [ e-NAND ] [ LPDDR2 S4B ]
● Packaged NAND flash memory with MultiMediaCard interface
● e-NAND system specificati
Manufacture
Hynix Semiconductor
BCP69
PNP MEDIUM POWER TRANSISTOR
* High current (max. -1A) * Low voltage (max. -20V). * Complementary to UTC BCP68
 APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages. 1 SOT-223
 ORDERING INFORMATION Ordering Number Lead
Manufacture
UTC
BCP56-16
Low power NPN Transistor

■ Silicon epitaxial planar NPN medium voltage transistor SOT-223 plastic package for surface mounting circuits Available in tape & reel packing In compliance with the 2002/93/EC European Directive The PNP complementary type is BCP53-16 2 2
■ 3
Manufacture
ST Microelectronics
BCP52
PNP MEDIUM POWER TRANSISTORS

 BVCEO -45V, -60V & -80V
 IC = -1A High Continuous Collector Current
 ICM = -2A Peak Pulse Current
 2W Power Dissipation
 Low Saturation Voltage VCE(sat) -500mV @ -0.5A
 Gain Groups 10 and 16
 Complementary NPN Types: BCP54, 55 and 56
 To
Manufacture
Diodes
BCP53
PNP General Purpose Amplifier
tage Collector Current - Continuous Operating and Storage Junction Temperature Range -80 -100 -5 -1.2 -55 to +150 V V V A °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild
Manufacture
Fairchild Semiconductor
BCP56
NPN medium power transistors
and benefits
 High current
 Three current gain selections
 High power dissipation capability
 Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
 Leadless very small SMD plastic package with medium power capabili
Manufacture
NXP
BCP51
PNP General Purpose Amplifier
)EBO ICBO IEBO hFE Parameter Test Condition IC = -10mA, IB = 0 IC = -100µA, IE = 0 IE = -10µA, IC = 0 VCB = -30V, IE = 0 VCB = -30V, IE = 0, Ta = 125°C VEB = -5.0V, IC = 0 IC = -5.0mA, VCE = -2.0V IC = -150mA, VCE = -2.0 IC = -500mA, VCE = -2.0V IC =
Manufacture
Fairchild Semiconductor
BCP55-16
NPN medium power transistors

• High current (max. 1 A)
• Low voltage (max. 80 V). APPLICATIONS
• Switching. DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. handbook, halfpage BCP54; BCP55; BCP56 PINNING PIN 1 2, 4 3
Manufacture
NXP
BCP68
2A NPN medium power transistors
and benefits
 High current
 Two current gain selections
 High power dissipation capability
 Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
 Leadless very small SMD plastic package with medium power capability
Manufacture
nexperia

Total 214 results






logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map