Bi-FET Datasheet | Specifications & PDF Download

QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme hig

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QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density

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< Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W DESCRIPTION RD15HVF1 is a MOS FET type

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Contactor Safety Combination Instructions 3TK2803, 3TK2804 3TK2907, 3TK29.3 DIN EN 60439 Part 1/ VDE 0660 Part 500 (04.94) Order No.: 3ZX1012-0TK20

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Contactor Safety Combination Operating Instructions 3TK2801 3TK2802 DIN EN 60947-5-1 (08.00) Order No.: 3ZX1012-0TK28-1AA1 English Read and under

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B0210D N-Channel 100-V (D-S) MOSFET General Description B0210D is the N-Channel logic enhancement mode power field effect transistors to provide exce

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QN3107M6N N-Channel 30V Fast Switching MOSFET General Description The QN3107M6N is the highest performance trench N-Channel MOSFET with extreme high

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QM3016P N-Ch 30V Fast Switching MOSFETs General Description The QM3016P is the highest performance trench N-ch MOSFETs with extreme high cell density

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B15N10D/F N-Channel 100-V (D-S) MOSFET General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to prov

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MITSUBISHI LINEAR ICs MS221/MST082P DUAL J-FET INPUT OPERATIONAL AMPLIFIERS DESCRIPTION The M5221/M5T082P are a semiconductor integrated circuit des

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B3942 N- and P-Channel 30-V (D-S) MOSFET General Description The B3942 is the N- and P-Channel logic enhancement mode power field effect transistors

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P2804BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 33A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25

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< Silicon RF Power MOS FET (Discrete) > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V DESCRIPTION RD02LUS2 is a MOS FET

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MSC015SMA070B4 Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increas

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B18N20D/F N-Channel 200-V (D-S) MOSFET General Description B18N20D/F combines advanced trench MOSFET technology with a low resistance package to prov

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OPA129 OPA129 OPA129 SBOS026A – JANUARY 1994 – REVISED APRIL 2007 Ultra-Low Bias Current Difet® OPERATIONAL AMPLIFIER FEATURES q ULTRA-LOW BIAS CUR

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PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features

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NTE7141 Integrated Circuit Dual BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output Description: The NTE7141 is a dual, operational amplifier i

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BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost

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MSC015SMA070B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the

(29 views)