Bi-FET Datasheet | Specifications & PDF Download

QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density

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Contactor Safety Combination Operating Instructions 3TK2801 3TK2802 DIN EN 60947-5-1 (08.00) Order No.: 3ZX1012-0TK28-1AA1 English Read and under

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QN3107M6N N-Channel 30V Fast Switching MOSFET General Description The QN3107M6N is the highest performance trench N-Channel MOSFET with extreme high

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Contactor Safety Combination Instructions 3TK2803, 3TK2804 3TK2907, 3TK29.3 DIN EN 60439 Part 1/ VDE 0660 Part 500 (04.94) Order No.: 3ZX1012-0TK20

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QM3016P N-Ch 30V Fast Switching MOSFETs General Description The QM3016P is the highest performance trench N-ch MOSFETs with extreme high cell density

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B15N10D/F N-Channel 100-V (D-S) MOSFET General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to prov

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< Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W DESCRIPTION RD15HVF1 is a MOS FET type

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QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme hig

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QM3024M3 N-Ch 30V Fast Switching MOSFETs General Description The QM3024M3 is the highest performance trench N-ch MOSFETs with extreme high cell dens

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B0210D N-Channel 100-V (D-S) MOSFET General Description B0210D is the N-Channel logic enhancement mode power field effect transistors to provide exce

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QM3016D N-Ch 30V Fast Switching MOSFETs General Description The QM3016D is the highest performance trench N-ch MOSFETs with extreme high cell density

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B18N20D/F N-Channel 200-V (D-S) MOSFET General Description B18N20D/F combines advanced trench MOSFET technology with a low resistance package to prov

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FEATURES Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline On

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www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9

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QM3002U N-Ch 30V Fast Switching MOSFETs General Description The QM3002U is the highest performance trench N-ch MOSFETs with extreme high cell density

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Data Sheet FEATURES Enhanced replacement for LF412 and TL082 AC performance Settles to ±0.01% in 1.0 μs 16 V/μs minimum slew rate (AD712J) 3 MHz minim

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Contactor Safety Combination Instructions 3TK2803, 3TK2804 3TK2907, 3TK29.3 DIN EN 60439 Part 1/ VDE 0660 Part 500 (04.94) Order No.: 3ZX1012-0TK20

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QM3016M6 N-Ch 30V Fast Switching MOSFETs General Description The QM3016M6 is the highest performance trench N-ch MOSFETs with extreme high cell densi

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< Silicon RF Power MOS FET (Discrete) > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V DESCRIPTION RD02LUS2 is a MOS FET

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a Precision, Low Cost, High Speed, BiFET Op Amp AD711 FEATURES Enhanced Replacement for LF411 and TL081 AC PERFORMANCE Settles to ؎0.01% in 1.0 ␮s

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