Bi-FET Datasheet | Specifications & PDF Download

G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme hig

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B0210D N-Channel 100-V (D-S) MOSFET General Description B0210D is the N-Channel logic enhancement mode power field effect transistors to provide exce

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QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density

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TL084I, TL084AI, TL084BI, TL084C, TL084AC, TL084BC General purpose JFET quad operational amplifiers P TSSOP14 (Thin shrink small outline package) D

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TL062, TL062A, TL062B Low-power JFET dual operational amplifiers Features ■ Very low power consumption: 200 µA ■ Wide common-mode (up to VCC+) and d

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UNISONIC TECHNOLOGIES CO., LTD USC120R040B 57A, 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET  DESCRIPTION SiC The material can ach

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QM2422M3 N-Channel 20V Fast Switching MOSFET General Description The QM2422M3 is a high performance trench N-channel MOSFET which utilizes extremely

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QN3107M6N N-Channel 30V Fast Switching MOSFET General Description The QN3107M6N is the highest performance trench N-Channel MOSFET with extreme high

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QM18N20D N-Channel 200V Fast Switching MOSFET General Description The QM18N20D is a high performance N-channel MOSFET which utilizes high voltage te

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< Silicon RF Power MOS FET (Discrete) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W DESCRIPTION RD15HVF1 is a MOS FET type

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Contactor Safety Combination Operating Instructions 3TK2801 3TK2802 DIN EN 60947-5-1 (08.00) Order No.: 3ZX1012-0TK28-1AA1 English Read and under

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HMM60N120T Silicon Carbide Power MOSFET N-channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • High Speed Switching wit

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B15N10D/F N-Channel 100-V (D-S) MOSFET General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to prov

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QM3016P N-Ch 30V Fast Switching MOSFETs General Description The QM3016P is the highest performance trench N-ch MOSFETs with extreme high cell density

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Contactor Safety Combination Instructions 3TK2803, 3TK2804 3TK2907, 3TK29.3 DIN EN 60439 Part 1/ VDE 0660 Part 500 (04.94) Order No.: 3ZX1012-0TK20

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< Silicon RF Power MOS FET (Discrete) > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V DESCRIPTION RD02LUS2 is a MOS FET

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B3942 N- and P-Channel 30-V (D-S) MOSFET General Description The B3942 is the N- and P-Channel logic enhancement mode power field effect transistors

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PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Pos

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Dual Bipolar/JFET, Audio Operational Amplifier OP275 FEATURES Excellent Sonic Characteristics Low Noise: 6 nV/Hz Low Distortion: 0.0006% High Slew R

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