CS120-2 Datasheet | Specifications & PDF Download

CIT SWITCH SPECIFICATIONS Electrical Ratings Electrical Life Contact Resistance Actuation Force Actuator Travel Dielectric Strength Insulation Resista

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Silicon N-Channel Power MOSFET ○R CS120N10 A8 General Description： CS120N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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Silicon N-Channel Power MOSFET ○R CS120N08 A8 General Description： CS120N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced

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N R N-CHANNEL MOSFET JCS120N08I MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V） Qg-typ  DC/DC    120A 80V 6mΩ 136nC APP

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Silicon N-Channel Power MOSFET ○R CS120N10 AR General Description： CS120N10 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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ACS120 Overvoltage protected AC switch (ACS) COM OUT G DPAK COM G TO-220FPAB OUT COM G COM OUT TO-220AB Features  Blocking voltage: VDRM / VRRM

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CIT SWITCH SPECIFICATIONS Electrical Ratings Electrical Life Contact Resistance Actuation Force Actuator Travel Dielectric Strength Insulation Resista

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METAL STRIP CURRENT SENSING RESISTORS HCS SERIES ■ Features ‧High power rating and low TCR ‧Low resistance and high precision tolerance (1%) ‧Inductan

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Specifier Product Information CS120-2 Commercial Specification Grade 15 and 20 Ampere AC Quiet Switches Side Wired, Toggle APPLICATION In accordance

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Document 131 Current Sensors – D18xx, CS1xxx These sensors function as the secondaries of a current transformer.The conductor carrying the current to

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Silicon N-Channel Power MOSFET ○R CS120N06 C8 General Description： CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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www.vishay.com RCS e3 Vishay Anti-Surge, High Power Thick Film Chip Resistors LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models The anti-surge thick fi

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N N-CHANNEL MOSFET JCS120N10I MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns-=m1a0xV） Qg-typ 120A 100V 6.5mΩ 133nC  DC/DC   

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Silicon N-Channel Power MOSFET ○R CS120N08 A0 General Description： CS120N08 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced

(14 views)

Silicon N-Channel Power MOSFET ○R CS120N06 A0 General Description： CS120N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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CIT SWITCH SPECIFICATIONS Electrical Ratings Electrical Life Contact Resistance Actuation Force Actuator Travel Dielectric Strength Insulation Resista

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CS120 Visibility Sensor User Guide Issued: 15.1.13 Copyright © 2010-2013 Campbell Scientific Ltd. CSL 880 Guarantee This equipment is guaranteed

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SiC Schottky Barrier Diode SCS120KE2 . Applications General rectification Dimensions (Unit : mm) Case 15.90 1.98 5.03 Structure Case 5.62 6.17

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Elektronische Bauelemente SCS1200P-C 1A, 200V Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEAT

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Silicon N-Channel Power MOSFET ○R CS120N10 A0 General Description： CS120N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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