D5N60 Datasheet | Specifications & PDF Download

5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching tim

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SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteris

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SEMICONDUCTOR TECHNICAL DATA General Description KHB7D5N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D5N60P1 This planar stripe MOSFET has bet

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BRD5N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,。 Low gate charge, l

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HFD5N60F_HFU5N60F HFD5N60F / HFU5N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Ox

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FDD5N60NZ — N-Channel UniFETTM II MOSFET FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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FCD5N60_F085 N-Channel SuperFET® MOSFET FCD5N60_F085 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 1.1 Ω Features „ 600V, 4.6A, typ. Rds(on)=860mΩ@VGS=10V

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HIGH VOLTAGE N-Channel MOSFET      WFU5N60/WFD5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics

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HFD5N60S_HFU5N60S Sep 2009 HFD5N60S / HFU5N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 4.3 A FEATURES ‰ Originative New Desig

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HFD5N60U_HFU5N60U HFD5N60U / HFU5N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Ox

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SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteris

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM

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WFD5N60B Product Description Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Swit

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FQD5N60C / FQU5N60C N-Channel MOSFET March 2013 N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω Description FQD5N60C / FQU5N60C Features • 2.8 A, 600 V,

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SVD5N60T/SVD5N60F_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD5N60T/F is an N-channel enhancement mode power MOS field effect transisto

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 1D5N60Z N VDMOS * ： ◆ 、 * ： ◆ , ◆ ◆100% * ： ◆

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TSD5N60M / TSU5N60M TSD5N60M/TSU5N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar str

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