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KHB4D5N60F, KHB4D5N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB4D5N60F Description

SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

KHB4D5N60F Features

* VDSS(Min. )= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ. ) =17nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D5N60P KHB4D5N60F Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (N

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This datasheet PDF includes multiple part numbers: KHB4D5N60F, KHB4D5N60P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KHB4D5N60F, KHB4D5N60P
Manufacturer
KEC
File Size
492.23 KB
Datasheet
KHB4D5N60P-KEC.pdf
Description
N CHANNEL MOS FIELD EFFECT TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: KHB4D5N60F, KHB4D5N60P.
Please refer to the document for exact specifications by model.

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CHANNEL MOS FIELD EFFECT TRANSISTOR KEC
KEC KHB4D5N60F-like datasheet