KHB4D5N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KHB4D5N60P
Manufacturer: KEC
File Size: 492.23 KB
Datasheet: KHB4D5N60P-KEC.pdf
Description: N CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS(Min. )= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ. ) =17nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D5N60P KHB4D5N60F Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (N

KHB4D5N60P Distributors

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KHB4D5N60P CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

KEC KHB4D5N60P-like datasheet