KHB4D0N65P N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA KHB4D0N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KHB4D0N65P
Manufacturer: KEC
File Size: 393.03 KB
Datasheet: KHB4D0N65P-KEC.pdf
Description: N CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ. )=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitiv

KHB4D0N65P Distributors

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KHB4D0N65P CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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