Datasheet Details
Part number:
KHB4D0N80F1, KHB4D0N80P1
Manufacturer:
KEC
File Size:
500.08 KB
Description:
N channel mos field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: KHB4D0N80F1, KHB4D0N80P1.
Please refer to the document for exact specifications by model.
KHB4D0N80F1, KHB4D0N80P1, N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB4D0N80F1 Features
* VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3
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