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KHB4D0N80F1, KHB4D0N80P1 N CHANNEL MOS FIELD EFFECT TRANSISTOR

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Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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This datasheet PDF includes multiple part numbers: KHB4D0N80F1, KHB4D0N80P1. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
KHB4D0N80F1, KHB4D0N80P1
Manufacturer
KEC
File Size
500.08 KB
Datasheet
KHB4D0N80P1-KEC.pdf
Description
N CHANNEL MOS FIELD EFFECT TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: KHB4D0N80F1, KHB4D0N80P1.
Please refer to the document for exact specifications by model.

Features

* VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ. )=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3

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