Part number:
KHB4D0N65F
Manufacturer:
KEC
File Size:
393.03 KB
Description:
N channel mos field effect transistor.
KHB4D0N65F Datasheet (393.03 KB)
* VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitiv
KHB4D0N65F Datasheet (393.03 KB)
KHB4D0N65F
KEC
393.03 KB
N channel mos field effect transistor.
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