KHB4D0N65F Datasheet, Transistor, KEC

KHB4D0N65F Features

• Transistor VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F Drain-Source Vo

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Part number:

KHB4D0N65F

Manufacturer:

KEC

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393.03kb

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📄 Datasheet

Description:

N channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent a

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