Part number:
KHB4D5N60F2
Manufacturer:
KEC
File Size:
495.72 KB
Description:
N channel mos field effect transistor.
KHB4D5N60F2 Datasheet (495.72 KB)
* VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB4D5N60F UNIT KHB4D5N60P KHB4D5N60F2 Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalan
KHB4D5N60F2 Datasheet (495.72 KB)
KHB4D5N60F2
KEC
495.72 KB
N channel mos field effect transistor.
📁 Related Datasheet
KHB4D5N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D5N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D0N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D0N65P N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D0N80F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D0N80F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D0N80P1 N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB011N40F1 High Voltage MOSFETs (KEC semiconductor)
KHB011N40F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB011N40P1 High Voltage MOSFETs (KEC semiconductor)
