Part number:
KHB4D0N80P1
Manufacturer:
KEC
File Size:
500.08 KB
Description:
N channel mos field effect transistor.
KHB4D0N80P1 Datasheet (500.08 KB)
* VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3
KHB4D0N80P1 Datasheet (500.08 KB)
KHB4D0N80P1
KEC
500.08 KB
N channel mos field effect transistor.
📁 Related Datasheet
KHB4D0N80F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D0N80F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D0N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D0N65P N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D5N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D5N60F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB4D5N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB011N40F1 High Voltage MOSFETs (KEC semiconductor)
KHB011N40F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR (KEC)
KHB011N40P1 High Voltage MOSFETs (KEC semiconductor)
