KHB4D0N80P1 Datasheet, Transistor, KEC

KHB4D0N80P1 Features

• Transistor VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O

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Part number:

KHB4D0N80P1

Manufacturer:

KEC

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500.08kb

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📄 Datasheet

Description:

N channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent a

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