KHB4D0N80P1 N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characte.

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Datasheet Specifications

Part number: KHB4D0N80P1
Manufacturer: KEC
File Size: 500.08 KB
Datasheet: KHB4D0N80P1-KEC.pdf
Description: N CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ. )=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3

KHB4D0N80P1 Distributors

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KHB4D0N80P1 CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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