DB3 Datasheet | Specifications & PDF Download

DB3 / DB4 Features The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. www.DataS

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DB3 DB4 SMDB3 ® DIAC FEATURES s VBO : 32V and 40V s LOW BREAKOVER CURRENT DESCRIPTION Functioning as a trigger diode with a fixed voltage reference,

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Small Signal Diode DB3-DB3TG 150mW Bi-directional Trigger Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features —Designed for through-Hole Devic

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Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible • 20 MHz Max Clock Frequency • Page Program Operation – Single Cyc

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DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchsspannung Peak pulse current Ma

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FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.),

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( DataSheet : www.DataSheet4U.com ) CAUTION catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and CAUTION(for (forstorage

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MJ1440 2 MBIT PCM SIGNALLING CIRCUIT MJ1440 HDB3 ENCODER/DECODER The 2.048 MBit PCM Signalling Circuits comprise a group of circuits which will perf

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EYD Not for new design Vishay Roederstein Aluminum Capacitors Power Printed Wiring Style FEATURES • Polarized aluminum electrolytic capacitors, non-

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Semiconductor Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310D B1 Outli

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Semiconductor Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB3101F DB1 Out

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SDB3101 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed

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TIGER ELECTRONIC CO.,LTD DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V DO-35 Features The three layer,two termnal,axial lead,hermetically

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SDB310Q SCHOTTKY BARRIER DIODE Features • Low power rectified • Silicon epitaxial type • High reliability Absolute Maximum Ratings (Ta = 25 OC) Parame

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Semiconductor Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310WA DB2 Out

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SDB310WKU SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-spee

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SDB310WKUF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-spe

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SDB310WMF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-spee

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30V, 3A SCHOTTKY BARRIER RECTIFIER SDB330 Schottky Barrier Rectifier Features  Low forward voltage drop  Low power loss and High efficiency  Low

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SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3682 (FDB3682) Features rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V

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