DMS Datasheet | Specifications & PDF Download

Product Specification NO. SP_S_1115_KJ-00027 P/N DMSP1115KJ-05-G-S2 Dynamic Speaker, 8 Ohms, 11x15x3.5mm, Leaf spring contact, GP Compliant Issue:

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D4558 FEATURES ● ● ● ● ● ● ● No frequency Compensation Required No latch-up Large common mode and differential voltage range Parameter tracking over t

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FDMS0310S N-Channel PowerTrench® SyncFETTM FDMS0310S N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4 mΩ Features General Description January 2015

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MOSFET – N‐Channel Shielded Gate POWERTRENCH) 150 V, 85 A, 8.8 mW FDMS8D8N15C General Description This N-Channel MV MOSFET is produced using onsemi’s

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FDMS0308AS N-Channel PowerTrench® SyncFETTM FDMS0308AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.8 mΩ October 2014 Features General Descripti

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FDMS8888 N-Channel PowerTrench® MOSFET June 2015 FDMS8888 NNNN N-Channel PowerTrench® MOSFET 30 V, 21 A, 9.5 m: Features General Description

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FDMS8692 N-Channel PowerTrench® MOSFET FDMS8692 N-Channel PowerTrench® MOSFET 30V, 28A, 9.0m: May 2009 tm Features General Description „ Max rDS

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FDMS0306AS N-Channel PowerTrench® SyncFETTM March 2015 FDMS0306AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ Features General Description

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FDMS7692 N-Channel PowerTrench® MOSFET January 2015 FDMS7692 N-Channel PowerTrench® MOSFET 30 V, 7.5 mΩ Features „ Max rDS(on) = 7.5 mΩ at VGS = 10

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D1067 DESCRIPTION The DMS1067 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 2A continuous output

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FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 10 mΩ a

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FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.85 mΩ March 2015 Feature

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FDMS7682-VB FDMS7682-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.003 at VGS = 10 V 0.005

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TMS320DM6467T www.ti.com SPRS605C – JULY 2009 – REVISED JUNE 2012 TMS320DM6467T Digital Media System-on-Chip Check for Samples: TMS320DM6467T 1 Dig

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FDMS0309AS N-Channel PowerTrench® SyncFETTM FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ January 2015 Features General Descripti

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インテリジェントパワーデバイス (IPD) MIP2E3DMS シリコン MOS  　  のをに  によりリアルタイムのが  　  スイッチング  Ta = 25°C±3°C ドレイン コントロール ピーク コントロール チャネル VD VC ID IDP IC Tch

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FDMS8670 N-Channel Power Trench® MOSFET May 2009 FDMS8670 N-Channel Power Trench® MOSFET 30V, 42A, 2.6m: tm Features General Description „ Max

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FDMS8320L N-Channel PowerTrench® MOSFET March 2016 FDMS8320L N-Channel PowerTrench® MOSFET 40 V, 248 A, 1.1 mΩ Features „ Max rDS(on) = 1.1 mΩ at V

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IRFP640 HEXFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast switching Ease of Paralleling Simple Drive Requirements ® Power MOSFET VDSS = 2

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FDMS7608S Dual N-Channel PowerTrench® MOSFET May 2014 FDMS7608S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 22 A, 10.0 mΩ Q2: 30 V, 30 A, 6.3 mΩ F

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