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D4558 FEATURES ● ● ● ● ● ● ● No frequency Compensation Required No latch-up Large common mode and differential voltage range Parameter tracking over t

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FDMS0308AS N-Channel PowerTrench® SyncFETTM FDMS0308AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.8 mΩ October 2014 Features General Descripti

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D1067 DESCRIPTION The DMS1067 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 2A continuous output

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FDMS9410L-F085 N-Channel Logic Level PowerTrench® MOSFET FDMS9410L-F085 N-Channel Logic Level PowerTrench® MOSFET 40 V, 50 A, 4.1 mΩ Features „ Typi

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FDMS7698 N-Channel PowerTrench® MOSFET FDMS7698 N-Channel PowerTrench® MOSFET 30 V, 22 A, 10 mΩ Features „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13

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インテリジェントパワーデバイス (IPD) MIP2E3DMS シリコン MOS  　  のをに  によりリアルタイムのが  　  スイッチング  Ta = 25°C±3°C ドレイン コントロール ピーク コントロール チャネル VD VC ID IDP IC Tch

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FDMS0310S N-Channel PowerTrench® SyncFETTM FDMS0310S N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4 mΩ Features General Description January 2015

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FDMS0306AS N-Channel PowerTrench® SyncFETTM March 2015 FDMS0306AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.4 mΩ Features General Description

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FDMS0309AS N-Channel PowerTrench® SyncFETTM FDMS0309AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 3.5 mΩ January 2015 Features General Descripti

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FDMS0310AS N-Channel PowerTrench® SyncFETTM FDMS0310AS N-Channel PowerTrench® SyncFETTM 30 V, 22 A, 4.3 mΩ August 2014 Features General Descriptio

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IRFP640 HEXFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast switching Ease of Paralleling Simple Drive Requirements ® Power MOSFET VDSS = 2

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MOSFET – N-Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH

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FDMS7692 N-Channel PowerTrench® MOSFET January 2015 FDMS7692 N-Channel PowerTrench® MOSFET 30 V, 7.5 mΩ Features „ Max rDS(on) = 7.5 mΩ at VGS = 10

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FDMS8888 N-Channel PowerTrench® MOSFET June 2015 FDMS8888 NNNN N-Channel PowerTrench® MOSFET 30 V, 21 A, 9.5 m: Features General Description

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インテリジェントパワーデバイス (IPD) MIP2E1DMS シリコン MOS  　  のをに  によりリアルタイムのが  　  スイッチング  Ta = 25°C±3°C ドレイン コントロール ピーク コントロール チャネル VD VC ID IDP IC Tch

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w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION HDM64GS24_-2 c 240x64 GRAPHICS LCD DISPLAY MODULE w w .D w t a S a e h t e

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LTO-DMS MBR4040 thru MBR4060 40 Amp HT Power Schottky Barrier Rectifier 40 Volts to 60 Volts Features * High Junction Temperature Capability * Low Lea

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m o c . www.datel.com U 4 t e e h S a t a D . w w w Actual Size ® ® DMS-20LCD Series 3½ Digit, LCD Display Low-Cost, Subminiature Digital Panel Vol

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