DS 35 DSA 35 DSI 35 DSAI 35 Rectifier Diode Aval.
DS35Q1GA - 3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH
PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History .FDS3590 - N-Channel MOSFET
FDS3590 November 2000 FDS3590 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve.NDS351N - N-Channel Logic Level Enhancement Mode Field Effect Transistor
March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode p.FDS3512 - N-Channel MOSFET
FDS3512 May 2001 FDS3512 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the o.FDS3572 - N-Channel MOSFET
FDS3572 November 2003 FDS3572 N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC .DS35-08A - Rectifier Diode Avalanche Diode
DS 35 DSA 35 DSI 35 DSAI 35 Rectifier Diode Avalanche Diode VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A VRSM V 900 1300 1300 1700 1900 V(BR)m.MDS35-800 - DIODE / SCR MODULE
MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION.NDS351AN - N-Channel MOSFET
NDS351AN June 2003 NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using .NDS352AP - P-Channel Logic Level Enhancement Mode Field Effect Transistor
February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P -Channel logic level enhancement mo.NDS352P - P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode po.NDS355N - N-Channel Logic Level Enhancement Mode Field Effect Transistor
March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode po.512-NDS352AP - Low Power MOSFET
BACK www.DataSheet4U.com FAIRCHILD Power MOSFETs Products may be RoHS compliant. Check mouser.com for RoHS status. NEXT MOSFETs SO-8 SOT-223 SO.KDS3512 - 80V N-Channel PowerTrench MOSFET
www.DataSheet4U.com SMD Type 80V N-Channel PowerTrench MOSFET KDS3512 IC IC Features 4.0 A, 80 V. RDS(ON) = 70m RDS(ON) = 80m @ VGS = 10 V @ VGS = .DS35M1GA - 3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH
PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History .NDS355AN - N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement.FDS3512 - N-Channel MOSFET
FDS3512 FDS3512 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall e.DS35Q2GA - 3.3V/1.8V x1/x2/x4 2G-bit SPI NAND FLASH
PN: DS35X2GAXXX DS35X2GAXXX 3.3V/1.8V x1/x2/x4 2G-bit SPI NAND FLASH Rev.06 (Jun 11, 2021) 1 PN: DS35X2GAXXX Catalog Revision History .DS35Q1GB - 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH
Dosilicon Confidential PN: DS35X1GBXXX DS35X1GBXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.05 (Aug. 05. 2022) 1 Dosilicon Confidential PN: D.DS35M1GB - 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH
Dosilicon Confidential PN: DS35X1GBXXX DS35X1GBXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.05 (Aug. 05. 2022) 1 Dosilicon Confidential PN: D.AP1150ADS35 - 14V Input / 200mA Output LDO Regulator
[AP1150ADSXX] AP1150ADSXX 14V Input / 200mA Output LDO Regulator 1. Genaral Description The AP1150ADSxx is a low dropout linear regulator with ON/OF.