DS35 Datasheet | Specifications & PDF Download

PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History

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PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History

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NDS351AN June 2003 NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using

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March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode p

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February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P -Channel logic level enhancement mo

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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Dosilicon Confidential PN: DS35X1GBXXX DS35X1GBXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.05 (Aug. 05. 2022) 1 Dosilicon Confidential PN: D

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Dosilicon Confidential PN: DS35X1GBXXX DS35X1GBXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.05 (Aug. 05. 2022) 1 Dosilicon Confidential PN: D

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Rev 1; 3/09 High-Voltage, NV, I2C POT General Description The DS3502 is a 7-bit, nonvolatile (NV) digital potentiometer (POT) featuring an output vol

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DS 35 DSA 35 DSI 35 DSAI 35 Rectifier Diode Avalanche Diode VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A VRSM V 900 1300 1300 1700 1900 V(BR)m

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March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode po

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NDS351AN NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced usin

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MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION

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January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 N-Channel logic level enhanceme

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MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION

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September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOT -3 P-Channel logic level enhancem

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NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement

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ds3553 ds3553 、， 8 。、，,、、、 。 ：2.1V-3.6V ：2x2x1.1，LGA-12 ：、 ：、、 ：95% ：95% 3.3V ：1.8uA ：4uA ：28uA 1 I2C，：100khz，：400khz 2

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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