DS35 Datasheet | Specifications & PDF Download

PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History

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MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION

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MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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PN: DS35X1GAXXX DS35X1GAXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.03 (Feb 20, 2020) 1 PN: DS35X1GAXXX Catalog Revision History

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Rev 1; 3/09 High-Voltage, NV, I2C POT General Description The DS3502 is a 7-bit, nonvolatile (NV) digital potentiometer (POT) featuring an output vol

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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Dosilicon Confidential PN: DS35X1GBXXX DS35X1GBXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.05 (Aug. 05. 2022) 1 Dosilicon Confidential PN: D

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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China Electronics Technology Group Corporation No.26 Research Institute 140MHz SAW Filter 3MHz Bandwidth Part Number: LB140DS35 www.sipatsaw.com SI

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MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction

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Dosilicon Confidential PN: DS35X1GBXXX DS35X1GBXXX 3.3V/1.8V x1/x2/x4 1G-bit SPI NAND FLASH Rev.05 (Aug. 05. 2022) 1 Dosilicon Confidential PN: D

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[AP1150ADSXX] AP1150ADSXX 14V Input / 200mA Output LDO Regulator 1. Genaral Description The AP1150ADSxx is a low dropout linear regulator with ON/OF

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FDS3590 November 2000 FDS3590 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION

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PN: DS35X2GAXXX DS35X2GAXXX 3.3V/1.8V x1/x2/x4 2G-bit SPI NAND FLASH Rev.06 (Jun 11, 2021) 1 PN: DS35X2GAXXX Catalog Revision History

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www.DataSheet4U.com SMD Type 80V N-Channel PowerTrench MOSFET KDS3512 IC IC Features 4.0 A, 80 V. RDS(ON) = 70m RDS(ON) = 80m @ VGS = 10 V @ VGS =

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