Enhance Datasheet | Specifications & PDF Download

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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Machine Translated by Google 1. Features 8-bit MCU based on 8051 compatible pipeline instructions ÿ Flash ROM: 32K bytes ÿ RAM: internal 256 bytes, e

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http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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P-Channel Enhancement Mode Power MOSFET Description The HM4421F uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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HY3008P/M/B/ MF /PL/PM N-Channel Enhancement Mode MOSFET Feature z 80V/100A RDS(ON)= 6.6mΩ(typ.)@VGS = 10V z 100% Avalanche Tested z Reliable and Ru

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WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology

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WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

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UNISONIC TECHNOLOGIES CO., LTD UC3854 Advance ENHANCED HIGH POWER FACTOR PREREGULATOR  DESCRIPTION The UTC UC3854 provide all the functions neces

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http://www.ncepower.com Pb Free Product NCE8580 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8580 uses advanced trench technology

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HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge

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Free Datasheet http://www.datasheet-pdf.com/ FHP740 FHP740 N MOS 。 AC-DC ， DC-DC， HPMW。 ★ ★ ★ 7A,400V,RDS(on)(）0.51Ω 、 （TC =25℃） — TC=2

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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SH79F1611 ADCPWM8051 1.  80518  16 X 16bit  832 / 16bit  132bit  Flash ROM：16K  RAM：1.5K  ： fOSC = 400k - 27MHz，VDD = 2.4V - 5.5V  （）： - ：4

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