F630 Datasheet | Specifications & PDF Download

IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630

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IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V

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PIC16F630/676 Data Sheet 14-Pin, Flash-Based 8-Bit CMOS Microcontrollers  2010 Microchip Technology Inc. DS40039F Note the following details of th

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630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the sel

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PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

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www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

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ADVANCED AND EVER ADVANCING MOULDED CASE CIRCUIT BREAKERS TECHNICAL NOTES www.DataSheet4U.com 98 A We have the pleasure of providing all our cust

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MOSFET www.DataSheet4U.com INCHANGE IRF630F N-channel mosfet transistor ‹ ¡¤ Features 123 With TO-220F package ¤¡ Low on-stateand thermal resista

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CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω

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MRF630 CASE 79-03, STYLE 5 UHF AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base

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MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS

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IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET General features Type IRF630 IRF630FP VDSS 200V 200V RDS

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CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω

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www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 20

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Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF630 RoHS-compliant Product N-CHA

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PIC16F630/676 Data Sheet 14-Pin FLASH-Based 8-Bit CMOS Microcontrollers  2003 Microchip Technology Inc. DS40039C Note the following details of the

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www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 20

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CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF630B CEBF630B CEIF630B CEFF630B VDSS 200V 200

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MRF630 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF630 is Designed for UHF large signal, FM Land Mobile Applications up to 512 MHz. PACK

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