.
Inchange Semiconductor
IRF630A - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V.
International Rectifier
F630NS - IRF630NS
www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit.
Inchange Semiconductor
IRF630 - N-channel mosfet transistor
MOSFET IRF630 N-channel mosfet transistor INCHANGE Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS.
INCHANGE
IRF630N - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRF630N，IIRF630N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.3Ω ·Enhancement mode ·Fast Switching Speed.
Fairchild Semiconductor
IRF630B - 200V N-Channel MOSFET
IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ.
International Rectifier
IRF630NS - Power MOSFET
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc.
ST Microelectronics
IRF630M - N-Channel MOSFET
www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 20.
STMicroelectronics
IRF630FI - N-CHANNEL MOSFET
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.
International Rectifier
IRF630PBF - POWER MOSFET
Lead-Free PD- 95916 IRF630PbF www.irf.com 1 9/27/04 IRF630PbF 2 www.irf.com IRF630PbF www.irf.com 3 IRF630PbF 4 www.irf.com IRF630PbF www..
Inchange Semiconductor
IRF630FI - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.4Ω ·6A and 200V ·single pulse avalanche energy rated ·SOA is Power- Dissi.
Thinki Semiconductor
IRF630PBF - N-Channel Type Power MOSFET
IRF630PBF ® IRF630PBF Pb Free Plating Product Pb 9A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Char.
STMicroelectronics
IRF630FP - N-CHANNEL MOSFET
IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET General features Type IRF630 IRF630FP VDSS 200V 200V RDS.
ST Microelectronics
IRF630MFP - N-Channel Power MOSFET
www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 20.
Vishay
IRF630 - Power MOSFET
www.vishay.com IRF630 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .
Vishay
IRF630S - Power MOSFET
Power MOSFET IRF630S, SiHF630S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V .
Hi-Sincerity Mocroelectronics
HIRF630 - N-Channel MOSFET
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 HIRF630 / HIRF630F N-CHA.
Motorola
MRF630 - UHF AMPLIFIER TRANSISTOR
MRF630 CASE 79-03, STYLE 5 UHF AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base .
STMicroelectronics
IRF630 - N-channel MOSFET
IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630 .
Fairchild Semiconductor
IRF630A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
