F630 Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

Rating: 1 ★ (9 votes)

ADVANCED AND EVER ADVANCING MOULDED CASE CIRCUIT BREAKERS TECHNICAL NOTES www.DataSheet4U.com 98 A We have the pleasure of providing all our cust

Rating: 1 ★ (7 votes)

IRF630PBF ® IRF630PBF Pb Free Plating Product Pb 9A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Char

Rating: 1 ★ (6 votes)

www.datasheet4u.com LA4-FWB (c) 2 LA1-DN LA1-DN10, DN01 LC1-F 2.4 LA1-DN, DC LA2-DT, DS LA3-DR LA1-DX, DY, DZ 2/152 Te Contactors and protec

Rating: 1 ★ (6 votes)

MDT10F630 1. General Description This 8-bit Micro-controller uses a fully static CMOS technology to achieve high speed, small size, low power and high

Rating: 1 ★ (6 votes)

Rating: 1 ★ (6 votes)

MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS

Rating: 1 ★ (6 votes)

Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF630 RoHS-compliant Product N-CHA

Rating: 1 ★ (6 votes)

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

Rating: 1 ★ (6 votes)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 HIRF630 / HIRF630F N-CHA

Rating: 1 ★ (5 votes)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.4Ω ·6A and 200V ·single pulse avalanche energy rated ·SOA is Power- Dissi

Rating: 1 ★ (5 votes)

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

Rating: 1 ★ (5 votes)

UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power M

Rating: 1 ★ (5 votes)

Power MOSFET IRF630S, SiHF630S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V

Rating: 1 ★ (5 votes)

OWNER’S MANUAL Safety and Reference LED TV* * LG LED TVs are LCD TVs with LED backlighting. Please read this manual carefully before operating your s

Rating: 1 ★ (5 votes)

MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High ripple, 125℃ GXFSeries ・Downsizing and high-ripple current version of GXE series ・For automobile m

Rating: 1 ★ (5 votes)

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

Rating: 1 ★ (4 votes)

www.DataSheet4U.com PIC16F630/676 Data Sheet 14-Pin FLASH-Based 8-Bit CMOS Microcontrollers  2003 Microchip Technology Inc. DS40039C www.DataShee

Rating: 1 ★ (4 votes)

630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the sel

Rating: 1 ★ (4 votes)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

Rating: 1 ★ (4 votes)