.
38N30 - FQA38N30
FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V,.FQA24N60 - 600V N-Channel MOSFET
FQA24N60 — N-Channel QFET® MOSFET FQA24N60 N-Channel QFET® MOSFET 600 V, 23.5 A, 240 mΩ June 2014 Description This N-Channel enhancement mode power.FQAF16N25C - 250V N-Channel MOSFET
FQAF16N25C FQAF16N25C 250V N-Channel MOSFET QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced.55N10 - FQA55N10
FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.FQA11N90 - 900V N-Channel MOSFET
FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,.13N80 - FQA13N80
FQA13N80 800V N-Channel MOSFET September 2006 QFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate cha.19N20C - FQA19N20C
FQA19N20C FQA19N20C 200V N-Channel MOSFET QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced u.12P20 - FQA12P20
www.DataSheet.co.kr FQA12P20 May 2000 QFET FQA12P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect t.FQA70N10 - 100V N-Channel MOSFET
FQA70N10 August 2000 QFET FQA70N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro.40N25 - FQA40N25
FQA40N25 — N-Channel QFET® MOSFET April 2014 FQA40N25 N-Channel QFET® MOSFET 250 V, 40 A, 70 mΩ Description This N-Channel enhancement mode power MO.FQA24N50 - 500V N-Channel MOSFET
FQA24N50 — N-Channel QFET® MOSFET June 2014 FQA24N50 N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VG.FQA11N90C - 900V N-Channel MOSFET
FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g.FQA18N50V2 - 500V N-Channel MOSFET
FQA18N50V2 QFET FQA18N50V2 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced usi.FQA36P15 - 150V P-Channel MOSFET
FQA36P15 QFET FQA36P15 150V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F.FQA9N90 - 900V N-Channel MOSFET
FQA9N90 March 2001 QFET FQA9N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.FQA28N15 - 150V N-Channel MOSFET
FQA28N15 — N-Channel QFET® MOSFET FQA28N15 N-Channel QFET® MOSFET 150 V, 33 A, 90 mΩ June 2014 Description Features This N-Channel enhancement mo.FQAF13N50 - 500V N-Channel MOSFET
QFET $ $ $ $ $ $ % &'())*+,) -.Ω/*,0)* 1 2 -( .FQAF15N70 - 700V N-Channel MOSFET
QFET $ $ $ $ $ $ % &'())*+,) &-Ω.*,/)* 0 1 ().FQA7N80C_F109 - N-Channel MOSFET
FQA7N80C_F109 — N-Channel QFET® MOSFET FQA7N80C_F109 N-Channel QFET® MOSFET 800 V, 7 A, 1.9 Ω Features • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS =.FQA55N25 - 250V N-Channel MOSFET
QFET % % % % % % &&'(&)*+,) )-Ω.*,/)* 0 1 /-) 2 01 /.