Fairchild Semiconductor FQA Datasheet | Specifications & PDF Download

FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V,

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www.DataSheet4U.com FQA5N90 September 2000 QFET FQA5N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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FQA19N20C FQA19N20C 200V N-Channel MOSFET QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced u

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FQA40N25 — N-Channel QFET® MOSFET April 2014 FQA40N25 N-Channel QFET® MOSFET 250 V, 40 A, 70 mΩ Description This N-Channel enhancement mode power MO

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FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

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FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 3

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FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,

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FQA7N90 March 2001 QFET FQA7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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FQA8N80 March 2001 QFET FQA8N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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FQAF5N90 September 2000 QFET FQAF5N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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FQAF7N90 March 2001 QFET FQAF7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS

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FQA12N60 April 2000 QFET FQA12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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FQA18N50V2 QFET FQA18N50V2 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced usi

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