GT10 (NAiS)
Programmable Display
GT10/GT30 Technical Manual Matsushita Electric Works (Europe) AG ARCT1F340V1.0END 1/2002
Programmable Display
GT10/GT30
Technical Manual
Includes i
(47 views)
GT100DA120U (Vishay Siliconix)
Insulated Gate Bipolar Transistor
www.DataSheet.co.kr
GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology tempe
(44 views)
GT100NA120UX (Vishay Siliconix)
IGBT
www.DataSheet.co.kr
GT100NA120UX
Vishay Semiconductors
High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology • Ver
(41 views)
GT1081 10 Woofer – Technical Data
SPECIFICATIONS
DIAMETER: SENSITIVITY (2.83 V @ 1 M): POWER HANDLING: FREQUENCY RESPONSE: NOMINAL IMPEDANCE: VOICE-C
(40 views)
GT100LA120UX (Vishay Siliconix)
IGBT
www.DataSheet.co.kr
GT100LA120UX
Vishay Semiconductors
Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology • Very
(39 views)
GOFORD
GT1003B
Description
The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suit
(39 views)
SGT10T60SD1F (Silan Semiconductors)
600V FIELD STOP IGBT
Silan Microelectronics
SGT10T60SD1S/F_Datasheet
10A, 600V FIELD STOP IGBT
DESCRIPTION
The SGT10T60SD1S/F field stop IGBT adopts Silan Field Stop III
(38 views)
GT100DA60U (Vishay Siliconix)
Insulated Gate Bipolar Transistor
www.DataSheet.co.kr
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology temper
(35 views)
MMGT100J120UZ6C (MacMic)
IGBT
November 2018
MMGT100J120UZ6C
Version 01
1200V 100A IGBT Module RoHS Compliant
PRODUCT FEATURES
□ IGBT CHIP(Trench+Field Stop technology) □ Low sw
(34 views)
GT105N10 (GOFORD)
N-Channel Enhancement Mode Power MOSFET
GT105N10K
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10K uses advanced trench technology to
provide excellent RDS(ON) , low gate
(34 views)
GT105N10K (GOFORD)
N-Channel Enhancement Mode Power MOSFET
GT105N10K
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10K uses advanced trench technology to
provide excellent RDS(ON) , low gate
(34 views)
GT100PI120T6H-T4M (NJSME)
IGBT
GT100PI120T6H-T4M
IGBT Module
Features：
Field Stop Trench Gate IGBT Short Circuit Rated>10μs Low Saturation Voltage Low Switching Loss 100%
(34 views)
GT105N10F (GOFORD)
N-Channel Enhancement Mode Power MOSFET
GT105N10F
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10F uses advanced trench technology to
provide excellent RDS(ON) , low gate
(33 views)
MMGT10CB120XB6C (MacMic)
IGBT
November 2019
MMGT10CB120XB6C
Version 01
1200V 10A PIM Module RoHS Compliant
PRODUCT FEATURES
□ IGBT CHIP(Trench+Field Stop technology) □ Substrat
(32 views)
SGT105R70ILB (STMicroelectronics)
700V 21.7A e-mode PowerGaN transistor
Prerelease product(s)
SGT105R70ILB
Datasheet
700 V, 80 mΩ typ., 21.7 A, e-mode PowerGaN transistor
8
1
5
4
TAB 1
8
4
5
PowerFLAT 8x8 HV for P
(32 views)
MMGT100W120X6C (MacMic)
IGBT
September 2015
MMGT100W120X6C
Version 0
1200V 100A Six-Pack Module RoHS Compliant
PRODUCT FEATURES
□ High level of integration □ IGBT CHIP(Trench+
(31 views)
SGT10U60SDM2D (Silan Semiconductors)
600V FIELD STOP IGBT
Silan Microelectronics
SGT10U60SDM2D_Datasheet
10A, 600V FIELD STOP IGBT
DESCRIPTION
The SGT10U60SDM2D field stop IGBT adopts Silan Field Stop IV+ t
(31 views)
IXGT10N170 (IXYS)
High Voltage IGBT
High Voltage IGBT
IXGH10N170 IXGT10N170
VCES = IC90 = VCE(sat) ≤
1700V 10A 4.0V
TO-247 (IXGH)
Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM SSOA (RBSO
(30 views)
GT105N10T (GOFORD)
N-Channel Enhancement Mode Power MOSFET
GT105N10T
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10T uses advanced trench technology to
provide excellent RDS(ON) , low gate
(30 views)
SGT10U60SDM2D (Silan Microelectronics)
600V FIELD STOP IGBT
Silan Microelectronics
SGT10U60SDM2D_Datasheet
10A, 600V FIELD STOP IGBT
DESCRIPTION
The SGT10U60SDM2D field stop IGBT adopts Silan Field Stop IV+ t
(30 views)
