GT10 Datasheet | Specifications & PDF Download

GT1081 10 Woofer – Technical Data SPECIFICATIONS DIAMETER: SENSITIVITY (2.83 V @ 1 M): POWER HANDLING: FREQUENCY RESPONSE: NOMINAL IMPEDANCE: VOICE-C

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Prerelease product(s) SGT105R70ILB Datasheet 700 V, 80 mΩ typ., 21.7 A, e-mode PowerGaN transistor 8 1 5 4 TAB 1 8 4 5 PowerFLAT 8x8 HV for P

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Silan Microelectronics SGT10U60SDM2D_Datasheet 10A, 600V FIELD STOP IGBT DESCRIPTION The SGT10U60SDM2D field stop IGBT adopts Silan Field Stop IV+ t

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Silan Microelectronics SGT10T60SD1S/F_Datasheet 10A, 600V FIELD STOP IGBT DESCRIPTION The SGT10T60SD1S/F field stop IGBT adopts Silan Field Stop III

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Silan Microelectronics SGT10U60SDM2D_Datasheet 10A, 600V FIELD STOP IGBT DESCRIPTION The SGT10U60SDM2D field stop IGBT adopts Silan Field Stop IV+ t

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Silan Microelectronics SGT10T60SD1S/F_Datasheet 10A, 600V FIELD STOP IGBT DESCRIPTION The SGT10T60SD1S/F field stop IGBT adopts Silan Field Stop III

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GT10/GT30 Technical Manual Matsushita Electric Works (Europe) AG ARCT1F340V1.0END 1/2002 Programmable Display GT10/GT30 Technical Manual Includes i

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www.DataSheet4U.com APTGT100H120 Full - Bridge Fast Trench + Field Stop IGBT® Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • Welding c

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GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm • • • • T

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www.DataSheet4U.com APTGT100H170G Full - Bridge Trench + Field Stop IGBT® Power Module VBUS Q1 G1 Q3 G3 VCES = 1700V IC = 100A @ Tc = 80°C Applicati

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www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTR

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www.DataSheet4U.com APTGT100H60T3 Full - Bridge Trench + Field Stop IGBT® Power Module 13 14 VCES = 600V IC = 100A* @ Tc = 80°C Application • Weldin

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www.DataSheet.co.kr GT100NA120UX Vishay Semiconductors High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Ver

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GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation (trench gate

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GT10G101 トランジスタ シリコンチャネル IGBT GT10G101 ○ ストロボ いがなエンハンスメントタイプです。 がい。 ゲートがい。 : VCE (sat) = 8V () (IC = 130A) : VGE = 20V () (IC = 130A) : mm (Ta = 25

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High Voltage IGBT Preliminary Data Sheet IXGH 10N170A IXGT 10N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 10 A = 6.0 V = 35 ns Symbol Test Condit

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November 2018 MMGT100J120UZ6C Version 01 1200V 100A IGBT Module RoHS Compliant PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ Low sw

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GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suit

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