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HGTG30N60 600V Planar IGBT Chip

600V Planar IGBT Chip 600V, 60A, VCE(sat) = 1.8V .

Fairchild Semiconductor

HGTG30N60 - 600V Planar IGBT Chip

600V Planar IGBT Chip 600V, 60A, VCE(sat) = 1.8V HGTG30N60 Part HGTG30N60 VCES 600V ICn 60A VCE (sat) Typ 1.8 Die Size 6.6 x 6.6 mm2 See page 2.
Rating: 1 (3 votes)
Fairchild Semiconductor

HGTG30N60B3D - N-Channel IGBT

HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and H.
Rating: 1 (2 votes)
Intersil Corporation

HGTG30N60C3 - N-Channel IGBT

HGTG30N60C3 Data Sheet January 2000 File Number 4042.2 63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching dev.
Rating: 1 (2 votes)
Fairchild Semiconductor

30N60B3D - HGTG30N60B3D

Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high vol.
Rating: 1 (2 votes)
ON Semiconductor

HGTG30N60C3D - N-Channel IGBT

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D The HGTG30N60C3D is a MOS gated high voltage switching device c.
Rating: 1 (2 votes)
Fairchild Semiconductor

HGTG30N60A4 - N-Channel IGBT

HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device com.
Rating: 1 (1 votes)
Intersil Corporation

HGTG30N60A4 - N-Channel IGBT

HGTG30N60A4 Data Sheet January 2000 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device co.
Rating: 1 (1 votes)
Fairchild Semiconductor

HGTG30N60A4D - N-Channel IGBT

Data Sheet HGTG30N60A4D September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volt.
Rating: 1 (1 votes)
Intersil Corporation

HGTG30N60A4D - N-Channel IGBT

HGTG30N60A4D Data Sheet January 2000 File Number 4830 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS g.
Rating: 1 (1 votes)
Fairchild Semiconductor

HGTG30N60B3 - N-Channel IGBT

HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the be.
Rating: 1 (1 votes)
Intersil Corporation

HGTG30N60B3 - N-Channel IGBT

HGTG30N60B3 Data Sheet January 2000 File Number 4444.2 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching dev.
Rating: 1 (1 votes)
Intersil Corporation

HGTG30N60B3D - N-Channel IGBT

HGTG30N60B3D Data Sheet January 2000 File Number 4446.2 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a.
Rating: 1 (1 votes)
Intersil Corporation

HGTG30N60C3D - N-Channel IGBT

HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is .
Rating: 1 (1 votes)
Fairchild Semiconductor

HGTG30N60C3D - N-Channel IGBT

HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high v.
Rating: 1 (1 votes)
ON Semiconductor

HGTG30N60A4 - SMPS IGBT

IGBT - SMPS 600 V, 60 A HGTG30N60A4 Description The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on−state co.
Rating: 1 (1 votes)
ON Semiconductor

HGTG30N60B3 - IGBT

IGBT - NPT 600 V HGTG30N60B3 Description The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on−state conductio.
Rating: 1 (1 votes)
ON Semiconductor

HGTG30N60A4D - N-Channel IGBT

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D The HGTG30N60A4D is a MOS gated high voltage switching devices combin.
Rating: 1 (1 votes)
ON Semiconductor

HGTG30N60B3D - N-Channel IGBT

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated high voltage switching device co.
Rating: 1 (1 votes)
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