HM2302 Datasheet | Specifications & PDF Download

N-Channel Trench Power MOSFET General Description The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operat

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HM2302 、 HM2302 。 ，。 ，。、 、、。 HM2302 、 I2C 。， 。、， 20 ， 。I2C ， I2C ， ，。、 CRC ，，，。 ，，，。 4 ，， 。 、 、、、、 、、、、、 、 、。 、 、、、、、、 、、、 I2C 、。 、（：mm） （：mm）

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J HM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET V(BR)DSS 20 V RDS(on)MAX 380mΩ@ 4.5V 450mΩ@ 2.5V 800mΩ@1.8V ID 0.75A

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.3 (98 1 &KDQQHO 9' 6026)(7 GENERAL DESCRIPTION The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are pro

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.3 (18 N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are pro

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.3 *8 1 &KDQQHO 9' 6026)(7 GENERAL DESCRIPTION The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produ

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HM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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HM2302A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge

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N-Channel Trench Power MOSFET General Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operat

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HM2302-VB HM2302-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at

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HM2302KR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate char

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HM2302F N-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge

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.3 * 1 &KDQQHO 9' 6026)(7 GENERAL DESCRIPTION The HM2302D is the N-Channel logic enhancement mode power field effect transistors are produce

Rating: 1 ★ (1 votes)