INCHANGE 2N6 Datasheet | Specifications & PDF Download

isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Volta

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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isc Thyristors 2N6399 DESCRIPTION ·With TO-220 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater paramet

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F ·DESCRIPTION ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Volta

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iscN-Channel MOSFET Transistor IRFP22N60K ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.28Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6770 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switch

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC current gain : hFE= 500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·1

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6110 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining V

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6703 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) ·High Swit

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6755 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switch

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6756 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switch

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·Fully

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage

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isc Thyristors 2N6509G APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor c

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Su

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