INCHANGE 2N6 Datasheet | Pinout, Features, Price Comparison & PDF

isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Volta

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

isc Thyristors 2N6399 DESCRIPTION ·With TO-220 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater paramet

isc Thyristors INCHANGE Semiconductor 2N6405 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crow

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot vari

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6110 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining V

isc Thyristors 2N6509G APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor c

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Curr

isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F ·DESCRIPTION ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Volta

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6123 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCE(sat) = 0.6V(Max.)@ IC= 1.5A

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalan

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·1

isc N-Channel MOSFET Transistor AOB12N65 FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot vari

Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe opera

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6581 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,Hi

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6106 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining V

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6109 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2.5A ·Collector-Emitter Sustaining