isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Volta

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

isc Thyristors 2N6399 DESCRIPTION ·With TO-220 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater paramet

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6121 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCE(sat) = 0.6V(Max.)@ IC= 1.5A

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6704 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(S

isc Thyristors 2N6509G APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor c

isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F ·DESCRIPTION ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Volta

isc Thyristors INCHANGE Semiconductor 2N6405 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crow

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6110 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining V

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·1

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot vari

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6421 DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Di

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6124 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCE(sat) = -0.6V(Max.)@ IC= -1.5

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6109 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2.5A ·Collector-Emitter Sustaining

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6107 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining V

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6123 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCE(sat) = 0.6V(Max.)@ IC= 1.5A

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 20-80@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·1