Philips Semiconductors Product specification N-c.
International Rectifier
IRF640N - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
International Rectifier
IRF640NS - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
nELL
IRF640 - N-Channel Power MOSFET
SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enh.
INCHANGE
IRF640N - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRF640N，IIRF640N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Spee.
INCHANGE
IRF640NL - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.
Fairchild Semiconductor
IRF640B - 200V N-Channel MOSFET
IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi.
International Rectifier
IRF640NPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
International Rectifier
IRF640NSPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
International Rectifier
IRF640NLPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
Vishay
IRF640S - Power MOSFET
www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
Inchange Semiconductor
IRF640 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Vo.
INCHANGE
IRF640NS - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.
Inchange Semiconductor
IRF640FI - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI FEATURES ·Low RDS(on) = 0.180Ω(TYP) ·Lower Input Capacita.
Inchange Semiconductor
IRF640A - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640A FEATURES ·Low RDS(on) = 0.144Ω(TYP) ·Lower Input Capacitan.
Thinki Semiconductor
IRF640PBF - N-Channel Type Power MOSFET
IRF640PBF ® IRF640PBF Pb Free Plating Product Pb 18A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Ch.
NXP
IRF640 - N-channel TrenchMOS transistor
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resista.
STMicroelectronics
IRF640 - N-Channel MOSFET
® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.
Fairchild Semiconductor
IRF640 - 200V N-Channel MOSFET
IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate po.
Fairchild Semiconductor
IRF640A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.