IRF640 Datasheet | Specifications & PDF Download

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enh

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® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0

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isc N-Channel MOSFET Transistor IRF640N，IIRF640N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Spee

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SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in hig

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640A FEATURES ·Low RDS(on) = 0.144Ω(TYP) ·Lower Input Capacitan

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resista

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IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate po

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® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0

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www.vishay.com IRF640 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qg

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IRF640 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge, l

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N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI FEATURES ·Low RDS(on) = 0.180Ω(TYP) ·Lower Input Capacita

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IRF640PBF ® IRF640PBF Pb Free Plating Product Pb 18A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Ch

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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PD -90902B IRF640S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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