IRF734 Datasheet | Specifications & PDF Download

UMW IRF7342TR Dual P-Channel MOSFET 1.Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and

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PD -91703 IRF7341 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape &

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PD- 94101A IRF7342D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applica

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PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic d

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PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Ava

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PD - 94391B IRF7341Q Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag HEXFET® Power MOSFET VDSS 55V RDS

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PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Le

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Power MOSFET IRF734, SiHF734 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 450 VGS = 10 V 45

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PD- 95299 IRF7342D2PbF Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schot

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 Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  Dynamic dv/dt Rating  Fast S

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PD - 97640 AUTOMOTIVE GRADE ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Dual P-Channel MOSFET Dynamic dV/dT Rating 150°C Operati

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 Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  Dynamic dv/dt Rating  Fast S

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AUTOMOTIVE MOSFET PD - 96362A AUIRF7341Q HEXFET® Power MOSFET 8 7 Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual

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VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -55 0.105 26 -3.4 V Ω nC A IRF7342TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8

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PD - 96109 IRF7342QPbF O O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & R

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  AUTOMOTIVE GRADE AUIRF7343Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFE

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Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allo

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  AUTOMOTIVE GRADE AUIRF7341Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dual N Channel MOSFET  Su

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AUTOMOTIVE MOSFET PD - 96343B Features l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 AUIRF7343Q N-Ch P-Ch -55V

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IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche

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