IRFP Datasheet | Pinout, Features, Price Comparison & PDF

PD -96175 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Swi

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260N，IIRFP260N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhancement mode: Vth =3.0 to 5.0 V

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PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed powe

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HEXFET® Power MOSFET PD - 9.1232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo

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IRFP460C February 2002 IRFP460C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generat

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PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralle

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PD - 9.1383A IRFP064N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp

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isc N-Channel MOSFET Transistor IRFP4568，IIRFP4568 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.9mΩ ·Enhancement mode: Vth =3.0 to 5.0 V

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isc N-Channel MOSFET Transistor IRFP4227，IIRFP4227 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤21mΩ ·Enhancement mode: ·100% avalanche tes

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St

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PD - 95007A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Par

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PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp

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