PD -96175 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Swi

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhancement mode: Vth =3.0 to 5.0 V

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260N，IIRFP260N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo

PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed powe

PD -96175 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Swi

PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generat

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St

PD - 9.1383A IRFP064N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp

HEXFET® Power MOSFET PD - 9.1232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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isc N-Channel MOSFET Transistor IRFP4227，IIRFP4227 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤21mΩ ·Enhancement mode: ·100% avalanche tes

N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET TYPE IRFP250 s s s s s IRFP250 VDSS 200V RDS(on) < 0.085Ω ID 33 A TYPICAL RDS(on) = 0.07

Power MOSFET IRFP240, SiHFP240 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP450A FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Vol

PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Spe