IRFP Datasheet | Specifications & PDF Download

PD -96175 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Swi

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250N，IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo

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PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St

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PD - 9.1383A IRFP064N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp

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PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed powe

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP240 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Volt

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isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhancement mode: Vth =3.0 to 5.0 V

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4468，IIRFP4468 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.6mΩ ·Enhancement m

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PD - 95057 IRFP9240PbF www.DataSheet4U.com • Lead-Free www.irf.com 1 2/26/04 IRFP9240PbF www.DataSheet4U.com 2 www.irf.com IRFP9240PbF www.

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Power MOSFET IRFP350, SiHFP350 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 150 Qgs (nC) 23 Qgd (nC) 80

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isc N-Channel MOSFET Transistor IRFP4227，IIRFP4227 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤21mΩ ·Enhancement mode: ·100% avalanche tes

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IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.27Ω 18.4A s TYPICAL RDS(on) = 0.22Ω s E

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iscN-Channel MOSFET Transistor IRFP150 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generat

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PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Spe

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N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET TYPE IRFP250 s s s s s IRFP250 VDSS 200V RDS(on) < 0.085Ω ID 33 A TYPICAL RDS(on) = 0.07

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