.
Inchange Semiconductor
2SB526 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement t.
Inchange Semiconductor
2SB1182 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% tested ·Minimum Lot-to-Lot variations for .
Inchange Semiconductor
2SB962-Z - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB962-Z DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Typ)@IC= -2.0A ·PNP.
Inchange Semiconductor
2SB1412 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% .
Inchange Semiconductor
2SB1669-Z - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·100% avalanche tested ·Minimum Lot-to-Lot vari.
Inchange Semiconductor
2SB688 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB688 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement .
Inchange Semiconductor
2SB1316 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da.
Inchange Semiconductor
2SB1216 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-e.
Inchange Semiconductor
2SB1275 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=-160V ·Complementary NPN types:2SD1918 ·100% avala.
Inchange Semiconductor
2SB1215 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB1215 DESCRIPTION ·Excellent linearity of hFE ·Small and slim package making it easy to make 2SB1215/2SD1815-used.
Inchange Semiconductor
2SB955 - Silicon PNP Power Transistor
isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltag.
Inchange Semiconductor
2SB924 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB924 DESCRIPTION ·Wide Safety Operation Area ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -12A ·C.
Inchange Semiconductor
2SB923 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -20A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -10A ·Co.
Inchange Semiconductor
2SB920 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB920 DESCRIPTION ·High Collector Current:IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -3A.
Inchange Semiconductor
2SB897 - Silicon PNP Power Transistor
isc Silicon PNP Darlington Power Transistor 2SB897 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-.
Inchange Semiconductor
2SB891 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB891 DESCRIPTION ·High Collector Current -IC= -2A ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Compl.
Inchange Semiconductor
2SB883 - Silicon PNP Power Transistor
isc Silicon PNP Darlington Power Transistor 2SB883 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -7A ·Wide Area of Safe Operation ·Low C.
Inchange Semiconductor
2SB882 - Silicon PNP Power Transistor
isc Silicon PNP Darlington Power Transistor 2SB882 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -5A ·Wide Area of Safe Operation ·Low C.
Inchange Semiconductor
2SB881 - Silicon PNP Power Transistor
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A ·Wide Area of Safe Operation ·Low Collect.
Inchange Semiconductor
2SB874 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SB874 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage : .
