Inchange Semiconductor Company Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Li

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5703 DESCRIPTION ·High Breakdown Voltage

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A ·Wide A

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION ¡¤ With TO-3PFa package ¡¤ Low collector saturation

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isc Silicon PNP Power Transistor BD302 DESCRIPTION ·DC Current Gain - : hFE = 30(Min.)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -4

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isc Silicon NPN Power Transistor DESCRIPTIONV ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot va

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5885 DESCRIPTION ·High Breakdown Voltage ·Wide Area of Safe Operation ·Built-in Damper Di

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isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h

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isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Curren

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5803 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 80V(Min) ·Compl

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isc Silicon NPN Power Transistors TIP53 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 35

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isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain-

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and

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isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO=

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