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N02L1618C1A - Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advanc.N08L1618C2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L1618C2A Advanc.MBM29DL161TE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES.N01L1618N1A - Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L1618N1A www.D.N04L1618C2A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L1618C2A www.D.M11L16161A - (M11x16161xA) 1M X 16 DRAM
$% DRAM FEATURES X16 organization EDO (Extended Data-Out) access mode 2 CAS Byte/Word Read/Write operation Single power supply : 5V ± 10% Vcc for 5V.L1614 - Liquid Crystal Display Modules
LCM Liquid Crystal Display Modules Seiko Instruments GmbH Dot Matrix Liquid Crystal Display Modules CHARACTER TYPE • FEATURES : • Slim, light weight.AT25DL161 - 16-Mbit 1.65V Minimum SPI Serial Flash Memory
AT25DL161 16-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support Features DATASHEET Single 1.65V – 1.95V supply Serial Peripheral.MBM29DL161BE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES.VL161 - USB 3.1 10G Data Switch
Datasheet USB 3.1 10G Data Switch with USB Type-C CC Detection Interface ● VL160 Type-C Switch (CC Mode) ● VL161 Single Switch Only (Bypass Mode) Octo.MX29L1611 - CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase.SBL16100CT - SCHOTTKY BARRIER RECTIFIER
BL GALAXY ELECTRICAL SBL1630CT---SBL16100CT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 16 A FEATURES Metal-Semiconductor junc.VBL1615 - N-Channel MOSFET
VBL1615 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 60 V 11 mΩ 12 mΩ 75 A Singl.A23L1616 - 2M X 16 / 4M X 8 BIT CMOS MASK ROM
A23L1616/A23L16161/A23L16162 Series Preliminary Document Title 2M X 16 / 4M X 8 BIT CMOS MASK ROM Revision History Rev. No. 0.0 0.1 2M X 16 / 4M X 8 .MBM29DL161TE-90 - 16M (2M x 8/1M x 16) BIT Dual Operation
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -70/90.MBM29DL161BE-70 - 16M (2M x 8/1M x 16) BIT Dual Operation
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -70/90.M24L16161DA - 16-Mbit (1M x 16) Pseudo Static RAM
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc. Publicat.M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161ZA Elite Semiconductor Memory Technology Inc. Publicat.