L161 Datasheet | Specifications & PDF Download

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ESMT SDRAM M12L16161A (2R) 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION  JEDEC standard 3.3V power supply The M12L16161A

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ESMT SDRAM M12L16161A (2Q) Operation Temperature Condition -40°C~85°C 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION z JEDEC

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90

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www.DataSheet4U.com MX23L1613 16M-BIT MASK ROM FEATURES • Bit organization - 2M x 8 (byte mode) - 1M x 16 (word mode) • Fast access time - Random acc

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L1618N1A www.D

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Document 753 -1 Shielded Power Inductors – PFL1610 • Low cost, low profile 0603 size power inductor • Only 1 mm high, and requires less than 2 mm2 of

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advanc

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$ % DRAM FEATURES X16 organization EDO (Extended Data-Out) access mode 2 CAS Byte/Word Read/Write operation Single power supply : 5V ± 10% Vcc for 5V

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -70/90

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ADVANCED INFORMATION MX29L1611G / MX29L1611* 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES 3.3V ± 10% for write and read operati

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ESMT SDRAM M12L16161A (2R) 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION  JEDEC standard 3.3V power supply The M12L16161A

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -70/90

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www.DataSheet4U.com A43L1616 Preliminary Document Title 1M X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 1M X 16 Bit X 2 Banks S

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTD/BD -70/90 s FEATURES D

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PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase

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$ % DRAM FEATURES X16 organization EDO (Extended Data-Out) access mode 2 CAS Byte/Word Read/Write operation Single power supply : 5V ± 10% Vcc for 5V

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L1618C2A www.D

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(1/10) Varistors(SMD) Countermeasure for Surge and Static Electricity Conformity to RoHS Directive AVR Series AVR-M, AVRL Types Varistor (Variable

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