LOGIC-LEVEL Datasheet | Specifications & PDF Download

 Description: Logic level sensitive gate triac intended to interfaced directly to microcontrollers,logic integrated circuits and other low power gate

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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T1610, T1635, T1650 BTA16, BTB16 Datasheet Snubberless™, logic level and standard 16 A Triacs A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins.

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CYStech Electronics Corp. Spec. No. : C999H8 Issued Date : 2015.03.10 Revised Date : 2020.02.25 Page No. : 1/10 N-Channel Logic Level Enhancement Mo

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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UNISONIC TECHNOLOGIES CO., LTD UT60N03 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET Power MOSFET  DESCRIPTION This device employs advanced MOSFET technolo

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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FT04 I LOGIC LEVEL TRIAC IPAK (Plastic) MT2 On-State Current 4 Amp Gate Trigger Current < 5 mA to < 10 mA Off-State Voltage 200 V ÷ 600 V MT1

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) -30V 8.5mΩ ID -70A P Channel MOSFET UIS, Rg

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐100V RDSON (MAX.) 205mΩ ID ‐10A G UIS, Rg 100% Test

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CYStech Electronics Corp. Spec. No. : C396V8 Issued Date : 2013.08.09 Revised Date : 2013.08.14 Page No. : 1/9 Dual N-Channel Logic Level Enhancemen

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EMB07P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 7.5mΩ ID ‐80A G UIS, Rg

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 150mΩ 250mΩ ID 3

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BT1308W series D Triacs logic level Rev. 01 — 27 February 2008 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Pas

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