LOGIC-LEVEL Datasheet | Specifications & PDF Download

 Description: Logic level sensitive gate triac intended to interfaced directly to microcontrollers,logic integrated circuits and other low power gate

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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T1610, T1635, T1650 BTA16, BTB16 Datasheet Snubberless™, logic level and standard 16 A Triacs A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins.

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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BTA08, BTB08, T810, T835, T850 Snubberless™, logic level and standard 8 A Triacs Datasheet - production data Features  On-state rms current, IT(RMS)

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 Description: Logic level sensitive gate triac intended to interfaced directly to microcontrollers,logic integrated circuits and other low power gate

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Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristor in a plastic envelope,

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PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5

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Philips Semiconductors Product specification Thyristors logic level for RCD/ GFI/ LCCB applications GENERAL DESCRIPTION Glass passivated, sensitive

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1.

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138K Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacit

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 14mΩ ID -12A P Channel MOSFET UIS, Rg

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 VDSS 30V 30V RDSON (MAX.) 9mΩ 9mΩ ID 16A 16A

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FDD6035AL FDD6690A September 2001 FDD6035AL N-Channel, Logic Level, PowerTrench MOSFET General Description This N-Channel Logic level MOSFET is pro

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