Matsuo's temperature control devices contribute to.
Infineon
IMBG120R008M2H - Silicon Carbide MOSFET
IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.
Infineon
IMLT65R060M2H - SiC MOSFET
Public IMLT65R060M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,.
Infineon
IMW65R015M2H - MOSFET
IMW65R015M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
Murata
LQM2HPN1R0MG0B - Inductor
Product Search Data Sheet LQM2HPN1R0MG0# Note: This datasheet may be out of date. Please download the latest datasheet of LQM2HPN1R0MG0# from the off.
Infineon
IMBG65R040M2H - MOSFET
IMBG65R040M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .
Infineon
IMZA65R015M2H - MOSFET
IMZA65R015M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .
Infineon
IMLT65R020M2H - SiC MOSFET
Public IMLT65R020M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,.
Infineon
IMZA65R007M2H - MOSFET
IMZA65R007M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .
Infineon
IMW65R007M2H - MOSFET
IMW65R007M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
Infineon
IMBG120R234M2H - Silicon Carbide MOSFET
IMBG120R234M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.
Infineon
IMT40R045M2H - 400V MOSFET
Public IMT40R045M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET Features • Ideal for high frequency switching and synchronous rectification • C.
Infineon
IMBG40R036M2H - 400V MOSFET
Public IMBG40R036M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET Features • Ideal for high frequency switching and synchronous rectification • .
Vicor Corporation
uRAM2H21 - Output Ripple Attenuation Module
PRELIMINARY 45 Features • >40dB ripple attenuation from 60Hz to 1MHz • Integrated OR’ing diode supports N+1 redundancy • Significantly improves load .
Murata
LQM2HPN2R2MEHB - Inductor
LQM2HPN2R2MEH# “#” indicates a package specification code. < List of part numbers with package codes > LQM2HPN2R2MEHL , LQM2HPN2R2MEHB Shape L size .
Infineon
IMBG120R053M2H - 1200V SiC MOSFET
IMBG120R053M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.
Infineon
IMBG65R007M2H - MOSFET
IMBG65R007M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .
Infineon
IMBG65R020M2H - MOSFET
IMBG65R020M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .
Infineon
IMW65R040M2H - MOSFET
IMW65R040M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
Infineon
IMBG120R012M2H - 1200V SiC MOSFET
IMBG120R012M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj.
