MJE3055 Datasheet | Specifications & PDF Download

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 TRANSISTOR (NPN) FEATURES Power dissipation PCM:

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isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-1

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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and sw

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors MJE2955T * NPN MJE3055T *

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION

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SEMICONDUCTOR MJE3055A(NPN) MJE2955A(PNP) RRooHHSS Nell High Power Products Complementary Silicon power transistors (10A / 60V / 75W) FEATURES Des

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isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-10

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isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150

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MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switchin

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MJE2955T (PNP and MJE3055T (NPN) Silicon Complementary Transistors Audio Power Amp, Switch TO−220 Type Package Description: The MJE2955T (PNP) and MJ

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MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz

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UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The UTC MJE3055T is designed for general purp

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2.

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE3055T DESCRIPTION ·With TO-220 package ·Complement to type MJE2955T ·D

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTIO

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Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. Pb Lead-free Production specification MJE3055 TO

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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and sw

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TIGER ELECTRONIC CO.,LTD E Product specification Complementary Silicon Power Ttransistors MJE3055T / MJE2955T DESCRIPTION It is intented for use in

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