.
HAOHAI
A2SHB - N-Channel MOSFET
3.7A, 20V N N N-Channel Enhancement Mode Field Effect Transistor SMD Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design fo.
INCHANGE
IRFZ44N - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta.
H&M Semiconductor
A1SHB - P-Channel Trench Power MOSFET
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
OSEN
A09T - 30V N-CHANNEL MOSFET
A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET Features： Fast switching speed High input impedance and low level drive Improved dv/dt c.
Huajing
CS150N03 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr.
Thinki Semiconductor
IRF3205 - N-Channel Trench Process Power MOSFET Transistor
IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F.
HOTTECH
8205A - Dual N-Channel MOSFET
Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON.
Bruckewell
A1SHB - P-Channel Enhancement Mode Power MOSFET
MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.
HOOYI
HY4008 - N-Channel MOSFET
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.
ETC
30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Alpha & Omega Semiconductors
D452 - N-Channel MOSFET
AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trench technology and design to pro.
Thinki Semiconductor
IRFZ44 - N-Channel Trench Power MOSFET
IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Fiel.
STMicroelectronics
24NM65N - N-channel Power MOSFET
STW24NM65N-STI24NM65N-STF24NM65N STB24NM65N - STP24NM65N N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation .
GFD
3401 - MOSFET
3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..
Rectron
A19T - P-Channel Enhancement Mode Power MOSFET
RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .
Inchange Semiconductor
5N60 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N60 ·DESCRIPTION ·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fa.
Excelliance MOS
B20N03 - N-Channel MOSFET
CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS, .
Infineon
70S360P7 - MOSFET
IPA70R360P7S MOSFET 700VCoolMOSªP7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesu.
Toshiba
K3878 - N-Channel MOSFET
2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistan.
CHONGQING PINGYANG
50N06 - N-CHANNEL MOSFET
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avala.
