P-HEMT Datasheet | Specifications & PDF Download

CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G I

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AMPLIFIERS - LINEAR & POWER - CHIP PRELIMINARY Typical Applications The HMC994A is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Milit

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2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics.

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www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300

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Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm d

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MICROWAVE POWER GaN HEMT TGI7179-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43.5dBm ŋHIGH GAIN GL= 12.0dB a

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E-pHEMT MMIC Product Features • Small size (4 x 4 mm) • High gain • High linearity • Low cost • Low Noise Figure • 30dB AGC Range • Pb-free/RoHS compl

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Advanced Information SPF-5043Z Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The o

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PRELIMINARY • PERFORMANCE ♦ 20 dBm Output Power (P1dB) ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 5

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FLK207XV GaAs FET & HEMT Chips FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd

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HMC903 v00.0310 www.DataSheet4U.com GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 18 GHz Features Low Noise Figure: 1.6 dB High Gain: 19 dB P1dB Output P

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VMMK-2303 0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA in Wafer Level Package Data Sheet Description Avago’sVMMK-2303 is an easy-to-use GaAs MMIC amplifie

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Amplifiers - Low Noise - SMT v01.0310 7 Typical Applications This HMC902LP3E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Mi

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)

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E-pHEMT MMIC Product Features • 30 ~ 2150MHz • High Gain • High linearity • SOIC-8 SMD Type package • Lower manufacturing cost • Low Noise Figure • -6

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E-pHEMT Product Features • 10 ~ 4000MHz • GaAs E-pHEMT • 0.7dB Noise Figure • 32dBm Output IP3 • 14dB Gain at 1900MHz • 14dBm P1 dB • SOT-143 Package

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