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ACQ624 - E-pHEMT MMIC
E-pHEMT MMIC Product Features • Small size (4 x 4 mm) • High gain • High linearity • Low cost • Low Noise Figure • 30dB AGC Range • Pb-free/RoHS compl.SPF5189Z - GaAs pHEMT LOW NOISE MMIC AMPLIFIER
SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th.HMC902LP3E - GaAs pHEMT MMIC
Amplifiers - Low Noise - SMT v01.0310 7 Typical Applications This HMC902LP3E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Mi.SPF-3043 - Low Noise Phemt GAAS Fet
www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300.2SK3001 - GaAs HEMT Low Noise Amplifier
2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics. .FLK207XV - GaAs FET & HEMT Chips
FLK207XV GaAs FET & HEMT Chips FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd .TGF2023-2-01 - SiC HEMT
TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT .TGI5867-130LHA - MICROWAVE POWER GaN HEMT
MICROWAVE POWER GaN HEMT TGI5867-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 12.5dB at .GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si.GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si.HMC441LP3 - GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER
LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44.LP3000SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1.LP6872P100 - Packaged 0.5W Power PHEMT
Filtronic Solid State FEATURES LP6872P100 Packaged 0.5W Power PHEMT GATE • • • • • +27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 G.LP750SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 26 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 0..LPA6836V - MEDIUM POWER PHEMT WITH SOURCE VIAS
Preliminary Data Sheet • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Sou.CFY66 - HiRel K-Band GaAs Super Low Noise HEMT
CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend.HMC1096LP3E - GaAs pHEMT MMIC X2 ACTIVE FREQUENCY MULTIPLIER
FREQUENCY MULTIPLIER - ACTIVE - SMT Typical Applications The HMC1096LP3E is suitable for: • Point-to-Point & VSAT Radios • Test Instrumentation • Mil.HMC994A - GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER
AMPLIFIERS - LINEAR & POWER - CHIP PRELIMINARY Typical Applications The HMC994A is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Milit.HMC347A - GaAs pHEMT SPDT NON-REFLECTIVE SWITCH
SWITCHES - CHIP HMC347A v02.0217 GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications This switch is suitable DC - 20 GHz applica.HMC943LP5E - GaAs pHEMT MMIC
Amplifiers - Linear & Power - SMT OBSOLETE v02.0113 Typical Applications The HMC943LP5E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point .