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RFHIC

ACQ624 - E-pHEMT MMIC

E-pHEMT MMIC Product Features • Small size (4 x 4 mm) • High gain • High linearity • Low cost • Low Noise Figure • 30dB AGC Range • Pb-free/RoHS compl.
Rating: 1 (6 votes)
RFMD

SPF5189Z - GaAs pHEMT LOW NOISE MMIC AMPLIFIER

SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th.
Rating: 1 (6 votes)
Analog Devices

HMC902LP3E - GaAs pHEMT MMIC

Amplifiers - Low Noise - SMT v01.0310 7 Typical Applications This HMC902LP3E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Mi.
Rating: 1 (6 votes)
Sirenza

SPF-3043 - Low Noise Phemt GAAS Fet

www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300.
Rating: 1 (5 votes)
Hitachi Semiconductor

2SK3001 - GaAs HEMT Low Noise Amplifier

2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics. .
Rating: 1 (5 votes)
Eudyna Devices

FLK207XV - GaAs FET & HEMT Chips

FLK207XV GaAs FET & HEMT Chips FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd .
Rating: 1 (5 votes)
Qorvo

TGF2023-2-01 - SiC HEMT

TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT .
Rating: 1 (5 votes)
Toshiba

TGI5867-130LHA - MICROWAVE POWER GaN HEMT

MICROWAVE POWER GaN HEMT TGI5867-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 12.5dB at .
Rating: 1 (5 votes)
Wolfspeed

GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si.
Rating: 1 (5 votes)
Wolfspeed

GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si.
Rating: 1 (5 votes)
Analog Devices

HMC441LP3 - GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER

LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44.
Rating: 1 (4 votes)
Filtronic Compound Semiconductors

LP3000SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1.
Rating: 1 (4 votes)
Filtronic Compound Semiconductors

LP6872P100 - Packaged 0.5W Power PHEMT

Filtronic Solid State FEATURES LP6872P100 Packaged 0.5W Power PHEMT GATE • • • • • +27 dBm Typical Power at 15 GHz 11 dB Typical Power Gain at 15 G.
Rating: 1 (4 votes)
Filtronic Compound Semiconductors

LP750SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 26 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 0..
Rating: 1 (4 votes)
Filtronic Compound Semiconductors

LPA6836V - MEDIUM POWER PHEMT WITH SOURCE VIAS

Preliminary Data Sheet • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Sou.
Rating: 1 (4 votes)
Infineon Technologies AG

CFY66 - HiRel K-Band GaAs Super Low Noise HEMT

CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend.
Rating: 1 (4 votes)
Analog Devices

HMC1096LP3E - GaAs pHEMT MMIC X2 ACTIVE FREQUENCY MULTIPLIER

FREQUENCY MULTIPLIER - ACTIVE - SMT Typical Applications The HMC1096LP3E is suitable for: • Point-to-Point & VSAT Radios • Test Instrumentation • Mil.
Rating: 1 (4 votes)
Analog Devices

HMC994A - GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER

AMPLIFIERS - LINEAR & POWER - CHIP PRELIMINARY Typical Applications The HMC994A is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Milit.
Rating: 1 (4 votes)
Analog Devices

HMC347A - GaAs pHEMT SPDT NON-REFLECTIVE SWITCH

SWITCHES - CHIP HMC347A v02.0217 GaAs pHEMT SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications This switch is suitable DC - 20 GHz applica.
Rating: 1 (4 votes)
Analog Devices

HMC943LP5E - GaAs pHEMT MMIC

Amplifiers - Linear & Power - SMT OBSOLETE v02.0113 Typical Applications The HMC943LP5E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point .
Rating: 1 (4 votes)
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