Power-MOSFET Datasheet | Specifications & PDF Download

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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Power MOSFETS DATASHEET LM30074NAI8A N-Channel Enhancement Mode MOSFET Leadpower-semiconductor Corp., Ltd sales@leadpower-semi.com (03) 6577339 FAX：(

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTI

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NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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PD - 91742A IRF9Z24NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Ope

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SiC Power MOSFET MCB30P1200LB ID25 = 38 A VDSS = 1200 V R = DS(on) max 52 mΩ Part number MCB30P1200LB 7 T1 4 9 8 7 Itsoohlaeteadtsisnukrface

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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Diode Silicon Carbide Schottky Diode IDM02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Data Sheet Rev. 2.1, 2021-06-09 Industrial Po

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G050P03T P-Channel Enhancement Mode Power MOSFET Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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Advanced Power Electronics Corp. AP3P7R0EM Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirem

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PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS=

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STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Fea

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8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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G020N03T N-Channel Enhancement Mode Power MOSFET Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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20V, 13A DUAL N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN0213T2 uses advanced trench technology and design to provide excellent RDS(on) with lo

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-7A,-15V P-Channel Power MOSFET GENERAL DESCRIPTION The Power MOSFET has extremely low on resistance, making it especially suitable for applications w

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BL25N60 Power MOSFET 1．Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the con

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