SFE Datasheet | Specifications & PDF Download

www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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UNISONIC TECHNOLOGIES CO., LTD 7N50-MTQ Preliminary 7.0A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N50-MTQ is an N-channel mode power MO

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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PSMN1R8-40YLC 22 August 2012 N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology Product data sheet 1. Product profile 1.1

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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching application

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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ME4812/ME4812-G N-Channel 30-V(D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4812 is the N-Channel logic enhancement mode power field effect

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AP2346GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoH

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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MOSFETs Silicon N-Channel MOS (DTMOS) TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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PD -96175 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Swi

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BLP02N08 MOSFET 1．Description Step-Down Converter BLP02N08, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench techno

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STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which i

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Silan Microelectronics SD6834_Datasheet CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD6834 is current mode PWM+P

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www.vishay.com IRF9640, SiHF9640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) -200 RDS(on) () VGS = -10 V Qg max. (nC) 44 Qgs (nC)

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