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Infineon Technologies AG
BGA614 - Silicon Germanium Broadband MMIC Amplifier
Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon T.
Germanium Power Devices
2N1671 - SILICON UNIJUNCTION TRANSISTOR
Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.
Motorola
2N2259 - NPN silicon and PNP germanium mesa complementary transistors
2N2256, 2N2257 (SILICON) 2N2258 {GERMANIUM} 2N2259 (GERMANIUM) CASE 22 (TO-18) Collector connected to cese NPN silicon and PNP germanium mesa comple.
Toshiba Semiconductor
MT3S111 - Silicon-Germanium NPN Epitaxial Planar Type Transistor
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise F.
SIRENZA MICRODEVICES
SGC-2363Z - Silicon Germanium Cascadable Gain Block
www.DataSheet4U.com Preliminary Information Product Description Sirenza Microdevices’ SGC-2363Z is a high performance SiGe HBT MMIC amplifier utilizi.
Motorola
2N2258 - NPN silicon and PNP germanium mesa complementary transistors
2N2256, 2N2257 (SILICON) 2N2258 {GERMANIUM} 2N2259 (GERMANIUM) CASE 22 (TO-18) Collector connected to cese NPN silicon and PNP germanium mesa comple.
Infineon Technologies AG
BGA619 - The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier
Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Ea.
RFMD
SGA-1263 - DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
SGA-1263(Z) DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package.
Sirenza Microdevices
SGA1163 - DC-6000 Mhz Silicon Germanium HBT Cascadeable Gain Block
Preliminary Product Description SGA-1163 Sirenza Microdevices SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) am.
Sirenza Microdevices
SGA-1163 - DC-6000 Mhz Silicon Germanium HBT Cascadeable Gain Block
Preliminary Product Description SGA-1163 Sirenza Microdevices SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) am.
Toshiba Semiconductor
MT3S113P - Silicon-Germanium NPN Epitaxial Planar Type Transistor
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit.
Toshiba Semiconductor
MT3S111TU - Silicon-Germanium NPN Epitaxial Planar Type Transistor
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features .
Toshiba Semiconductor
MT3S108FS - Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S108FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S108FS VCO OSCILLETOR STAGE VHF-SHF Low Noise Amplifier Application FEAT.
Toshiba Semiconductor
MT3S107FS - Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application FEATURES.
Toshiba Semiconductor
MT3S106FS - Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application FEAT.
Sirenza Microdevices
SGA-0163 - Silicon Germanium Cascadeable Gain Block
Preliminary SGA-0163 Product Description The SGA-0163 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron em.
Renesas Technology
RQG1004UPAQL - NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
www.DataSheet4U.com RQG1004UPAQL NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1552-0100 Rev.1.00 Jul 20, 2007 Features .
SIRENZA MICRODEVICES
SGC-4386Z - Silicon Germanium Cascadable Gain Block
www.DataSheet4U.com SGC-4386Z Product Description Sirenza Microdevices’ SGC-4386Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlingto.
NXP Semiconductors
BFU725F - NPN wideband silicon germanium RF transistor
BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile CAUTION 1.1 General descr.
RichWave Technology
RTC6689H - silicon-germanium (SiGe) power amplifier
RTC6689H V0.2 Data Sheet March 2005 DESCRIPTION The RTC6689H silicon-germanium (SiGe) power amplifier (PA) is designed to operate in 2.4GHz ISM band,.
