TIM1414-8 Datasheet | Specifications & PDF Download

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =39.5 dBm at 14.0 G

Rating: 1 ★ (6 votes)

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 38.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.5dB at 14.0GHz to 14.5GHz ･HERMETICALLY

Rating: 1 ★ (5 votes)

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 7.5dB at 14.0GHz to 14.5GHz ･HERMETICALLY

Rating: 1 ★ (5 votes)

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =40.5 dBm at 14.0 G

Rating: 1 ★ (4 votes)

www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com D

Rating: 1 ★ (4 votes)

www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com

Rating: 1 ★ (4 votes)

MICROWAVE POWER GaAs FET TIM1414-15L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 14.0GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0d

Rating: 1 ★ (4 votes)

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ･LOW INTERMOD

Rating: 1 ★ (4 votes)

MICROWAVE POWER GaAs FET TIM1414-18L-252 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB=

Rating: 1 ★ (4 votes)

www.DataSheet4U.com TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power

Rating: 1 ★ (3 votes)

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 33.5 dBm at 14.0

Rating: 1 ★ (3 votes)

www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com D

Rating: 1 ★ (3 votes)

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 36.5 dBm at 14.0

Rating: 1 ★ (3 votes)

www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com D

Rating: 1 ★ (3 votes)

www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com

Rating: 1 ★ (3 votes)

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features • Low intermodulation di

Rating: 1 ★ (3 votes)

Rating: 1 ★ (2 votes)

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level

Rating: 1 ★ (2 votes)

www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com D

Rating: 1 ★ (2 votes)

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH

Rating: 1 ★ (2 votes)