Toshiba 2SB Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −

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2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage VCEO=-150V (Min.) High Transit

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TA78M05,06,08,09,10,12,15,18,20,24SB TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA78M05SB, TA78M06SB, TA78M08SB, TA78M09SB, TA78M10S

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low

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TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amp

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: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB686 POWER AMPLIFIER APPLICATIONS. 15.9MAX. Unit in mm 03.2±Q .2 FEATURES • Complementary to 2

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This Material Copyrighted By Its Respective Manufacturer Free Datasheet http://www.datasheet4u.com/ This Material Copyrighted By Its Respective Manuf

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation volta

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www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power

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TA7805,057,06,07,08,09,10,12,15,18,20,24SB TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7805SB, TA78057SB, TA7806SB, TA7807SB, TA780

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SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. FEATURES . Complementary to 2SD718. . Recommended for 45 ~50W

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SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) 2SB1 034 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICA

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: SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS, FEATURES • High Power Dissipation • High Breakdown Voltage : P c = 1

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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB905 2SB905 Power Amplifier Applications • Complementary to SD1220 Absolute Maximum

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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Current :

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: SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. 10.3MAX. Unit in mm FEATURES . Low Collector Saturati

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