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Toshiba Semiconductor
30
B1640 - 2SB1640
2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • • • Low saturation voltage: VCE (sat) .
Toshiba Semiconductor
25
B1375 - 2SB1375
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −.
Toshiba
16
2SB554 - PNP Transistor
: SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS, FEATURES • High Power Dissipation • High Breakdown Voltage : P c = 1.
Toshiba Semiconductor
11
2SB1640 - Silicon PNP Transistor
2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • • • Low saturation voltage: VCE (sat) .
Toshiba
11
2SB686 - SILICON PNP TRANSISTOR
: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB686 POWER AMPLIFIER APPLICATIONS. 15.9MAX. Unit in mm 03.2±Q .2 FEATURES • Complementary to 2.
Toshiba
9
2SB755 - SILICON PNP TRANSISTOR
2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage VCEO=-150V (Min.) High Transit.
Toshiba
9
B1457 - 2SB1457
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amp.
Toshiba Semiconductor
9
B1020A - 2SB1020A
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Toshiba
8
2SB688 - Silicon PNP Transistor
SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. FEATURES . Complementary to 2SD718. . Recommended for 45 ~50W.
Toshiba
7
2SB595 - SILICON PNP TRANSISTOR
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter .
Toshiba
6
2SB596 - SILICON PNP TRANSISTOR
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • Good Linearity of hp E . • Complementary to 2SD526. • Recomme.
Toshiba
6
2SB834 - Silicon PNP Transistor
: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES C.3 MAX. Unit in mm 3.6±C • Low Co.
Toshiba
5
2SB753 - SILICON PNP TRANSISTOR
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) o 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: High Collector .
Toshiba
5
2SB673 - Silicon PNP Transistor
: B673" 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
Toshiba
5
2SB675 - Silicon PNP Transistor
: B673" 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
Toshiba
5
2SB999 - Silicon PNP Transistor
: E557 2SB998 2SB999I SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICA.
Toshiba
5
2SB679 - SILICON PNP TRANSISTOR
2SB679 SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS. PULSE MOTOR.
Toshiba
5
2SB1682 - Silicon PNP Triple Diffused Type Transistor
2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 ○ Power Amplifier Applications ○ High-Power Switchi.
Toshiba
5
B1016A - 2SB1016A
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low .