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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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Free Datasheet http://www.datasheetlist.com/ Free Datasheet http://www.datasheetlist.com/ Free Datasheet http://www.datasheetlist.com/ Free Datashe

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LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1

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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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Preliminary Data Sheet • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Ou

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PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Pow

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PACKAGED 2W POWER PHEMT • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP300

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КТ8232 А, Б. N-P-N КРЕМНИЕВЫЙ ВЫСОКОВОЛЬТНЫЙ МОЩ НЫЙ СОСТАВНОЙ ТРАНЗИСТОР Предназначендляприменениявпереключающихиимпульсныхсхемах. Идеально подходит

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2 W POWER PHEMT • FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compressi

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1W POWER PHEMT • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression

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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Powe

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LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦

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PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT • FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz

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www.DataSheet4U.com PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type DESCRIPTION RT3CLLM is

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КТ8232 А, Б. N-P-N КРЕМНИЕВЫЙ ВЫСОКОВОЛЬТНЫЙ МОЩ НЫЙ СОСТАВНОЙ ТРАНЗИСТОР Предназначендляприменениявпереключающихиимпульсныхсхемах. Идеально подходит

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КТ8232 А, Б. N-P-N КРЕМНИЕВЫЙ ВЫСОКОВОЛЬТНЫЙ МОЩ НЫЙ СОСТАВНОЙ ТРАНЗИСТОР Предназначендляприменениявпереключающихиимпульсныхсхемах. Идеально подходит

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LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability October 2003 LM5110 Dual 5A Compound Gate Driver with Negative Output Vo

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www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri

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