logic-level Datasheet | Specifications & PDF Download

 Description: Logic level sensitive gate triac intended to interfaced directly to microcontrollers,logic integrated circuits and other low power gate

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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T1610, T1635, T1650 BTA16, BTB16 Datasheet Snubberless™, logic level and standard 16 A Triacs A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins.

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐100V RDSON (MAX.) 205mΩ ID ‐10A G UIS, Rg 100% Test

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 9.5mΩ 9.5mΩ ID 30A

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UNISONIC TECHNOLOGIES CO., LTD UT60N03 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET Power MOSFET  DESCRIPTION This device employs advanced MOSFET technolo

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CYStech Electronics Corp. Spec. No. : C999H8 Issued Date : 2015.03.10 Revised Date : 2020.02.25 Page No. : 1/10 N-Channel Logic Level Enhancement Mo

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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UNISONIC TECHNOLOGIES CO., LTD UT131 TRIAC LOGIC LEVEL TRIAC  DESCRIPTION Passivated, sensitive gate triac in a plastic envelope, intended for use

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FT04 I LOGIC LEVEL TRIAC IPAK (Plastic) MT2 On-State Current 4 Amp Gate Trigger Current < 5 mA to < 10 mA Off-State Voltage 200 V ÷ 600 V MT1

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 90mΩ ID ‐10A G S Pb‐Free Lead Plat

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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