AO4822A Datasheet 30V Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AO4822A is Pb-free (meets ROHS & Sony 259 specifications).

AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor General.

VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www. DataSheet4U. com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 8.5 6.6 30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction.

Part Number	Description	Manufacturer
AO4822A	30V Dual N-Channel MOSFET	VBsemi
AO4822A	Dual N-Channel MOSFET	Kexin
AO4822	Dual N-Channel MOSFET	Kexin