NDT453N Datasheet - Fairchild

N-Channel Enhancement Mode Field Effect Transistor

NDT453N Features

* 8A, 30V. RDS(ON) = 0.028Ω @ VGS = 10V. RDS(ON) = 0.042Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________ D

NDT453N General Description

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part.

NDT453N Datasheet (226.50 KB)

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Datasheet Details

Part number:

NDT453N

Manufacturer:

Fairchild

File Size:

226.50 KB

Description:

N-channel enhancement mode field effect transistor.

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NDT453N N-Channel Enhancement Mode Field Effect Transistor Fairchild

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NDT453N Features

NDT453N General Description

Datasheet Details

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Description:

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