NDT453N transistor equivalent, n-channel enhancement mode field effect transistor.
8A, 30V. RDS(ON) = 0.028Ω @ VGS = 10V. RDS(ON) = 0.042Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a .
such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide supe.
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