2N6667 - Silicon PNP Power Transistor

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A Complement to Type 2N6387 APPLICATIONS Designed for general purpose amplifier and low sp

Inchange Semiconductor

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Datasheet Details

Part number	2N6667
Manufacturer	Inchange Semiconductor
File Size	144.47 KB
Description	Silicon PNP Power Transistor
Datasheet	2N6667 Datasheet
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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6667 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A ·Complement to Type 2N6387 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

Published: Oct 17, 2016 |