| Part number | 2N6667 |
|---|---|
| Datasheet | 2N6667-InchangeSemiconductor.pdf |
| File Size | 144.47 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A ·plement to Type 2N6387 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6667 | DARLINGTON POWER TRANSISTORS | ON Semiconductor |
 |
2N6667 | DARLINGTON POWER TRANSISTORS | Motorola |
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2N6667 | Silicon PNP Transistors | NTE |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N6666 | Silicon PNP Darlington Power Transistor |
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| 2N6040 | Silicon PNP Power Transistors |
| 2N6041 | Silicon PNP Power Transistors |
| 2N6042 | Silicon PNP Power Transistors |
| 2N6050 | Silicon PNP Power Transistors |
| 2N6051 | Silicon PNP Power Transistors |
| 2N6052 | Silicon PNP Power Transistors |
| 2N6057 | Silicon NPN Power Transistors |
