PTFA091201HL Datasheet | Infineon

PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 - 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 m A, ƒ = 959.8 MHz 0 55 50 - Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and Ro HS pliant Broadband internal matching Typical EDGE performance - Average output power = 50 W - Gain = 18.5 d B - Efficiency = 44% Typical CW performance - Output power at P- 1d B = 135 W - Gain = 17 d B - Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power - - Drain Efficiency (%) Modulation Spectrum (d B) -10 -20 -30 -40 -50 -60 -70 -80 -90 36 38 40 42 44 46 48 50 Efficiency 40 35 400 KHz 30 25 20 - 600 KHz 15 10 - - - Output Power, avg. (d Bm) RF Characteristics...